A lateral DMOS with partial buried-oxide layer to achieve better RESURF effect
نویسندگان
چکیده
منابع مشابه
Optimum Design for Eliminating Back Gate Bias Effect of Silicon-on- insulator Lateral Double Diffused Metal-oxide-semiconductor Field Effect Transistor with Low Doping Buried Layer
An optimum design with silicon-on-insulator (SOI) device structure was proposed to eliminate back gate bias effect of the lateral double diffused metal-oxide-semiconductor field effect transistor (LDMOSFET) and to improve breakdown voltage. The SOI structure was characterized by low doping buried layer (LDBL) inserted between the silicon layer and the buried oxide layer. The LDBL thickness is a...
متن کاملA partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
In this paper, a near-triangular buried-oxide partial silicon-on-insulator (TB-PSOI) lateral double-diffused MOS field-effect transistor is proposed. The electric field and electrostatic potential in this structure are modified by the gradual buried-oxide thickness increase. The modification includes the addition of a new peak in the electric field in comparison to that of the conventional PSOI...
متن کاملStrategies to Improve Homing of Stem Cells to achieve better Efficacy in Stem Cell Therapy
Stem/progenitor cell based therapeutic approach in our daily routine clinical practice, has been elusive dream in medical sciences and improvement of stem cell homing as one of major challenges in cell therapy programs, has been considered a promising milestone. It has been proved that stem/progenitor cells exhibit a homing response to injured tissues/organs, mediated by interactions of chemoki...
متن کاملLinearly graded doping drift region: a novel lateral voltage-sustaining layer used for improvement of RESURF LDMOS transistor performances
A linearly graded doping drift region structure, a novel lateral voltage-sustained layer used for improvement of reduced surface field (RESURF) LDMOS transistor performance has been evaluated theoretically, numerically and experimentally in this paper for the first time. Due to the coupling effect of the two-dimensional (2D) electrical field, it is found from the theory developed here that the ...
متن کاملA High Breakdown Voltage Two Zone Step Doped Lateral Bipolar Transistor on Buried Oxide Thick Step
---A novel two zone step doped (TZSD) lateral bipolar junction transistor (LBJT) on silicon-oninsulator (SOI) with buried oxide thick step (BOTS) is proposed. The concept of linear doping and linear oxide thickness for increasing the breakdown voltage has been replaced by using step in doping and step in oxide thickness. These steps result in the creation of additional electric field peaks in t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2014
ISSN: 1349-2543
DOI: 10.1587/elex.11.20140055