Characterization of Planar Defects in Annealed SiGe/Si Heterostructure

Di-Carbon Defects in Annealed Highly Carbon Doped GaAs

Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm21 in GaAs codoped with C and C after annealing at 850 ±C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom...

Light-induced Defects in Thermal Annealed Hydrogenated Amorphous Silicon

The metastable defects of a-Si:H samples annealed at temperatures in the 300-550°C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable d...

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Extended defects formation in nanosecond laser-annealed ion implanted silicon.

Damage evolution and dopant distribution during nanosecond laser thermal annealing of ion implanted silicon have been investigated by means of transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography. Different melting front positions were realized and studied: nonmelt, partial melt, and full melt with respect to the as-implanted dopant profile. In both boron...

Processing and Characterization of 300 mm Argon-Annealed Wafers

High nitrogen doped 300 mm silicon wafers annealed in 100 % argon ambient were investigated whether modified pulling conditions will lead to improved slip behavior and homogeneous radial oxygen precipitation. It turned out that increasing of the cooling rate during crystal pulling is beneficial on these wafer defect parameters. The void morphology was investigated by TEM and oxygen precipitatio...