Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region
نویسندگان
چکیده
منابع مشابه
Performance Analysis of Double Hetero-gate Tunnel Field Effect Transistor
A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...
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and the same has not been submitted elsewhere for the award for any other degree. Acknowledgment At the very outset, I take the opportunity to thank Almighty for showering his choicest blessings on a little mortal like me. But for his I would not have overcome the several odds that came in my way. for giving me an opportunity to carry out my studies and successfully complete this project work a...
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ژورنال
عنوان ژورنال: Applied Sciences
سال: 2019
ISSN: 2076-3417
DOI: 10.3390/app9183716