High Performance Strained-SOI CMOS Technology

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

SOI-CMOS Device Technology

In recent years, the mobile communication market represented by the mobile telephone has been showing remarkable growth. This market has been making tough demands for semiconductor integrated circuits, which are mounted components, to consume less power, have higher integration, have multi-function capability, and be faster. We at Oki have been working on developing complete depletion type SOI ...

متن کامل

3D CMOS SOI for High Performance Computing

This paper addresses three topics : First, a new three-dimensional CMOS-SOI on SOI technology is presented, then design methodologies are proposed for this technology and last, a comparison is carried out between 2D and 3D designs. In this technology the P-channel devices are stacked over the N-channel ones. All gates are 100nm length. New design constraints are introduced. Consequently, new de...

متن کامل

Modeling and Performance of Spiral Inductors in Soi Cmos Technology

Modeling and performance of on-chip spiral inductors is presented. Y-parameters are obtained from the measured S-parameters of the inductor fabricated in 0.35-μm SOI CMOS technology. Matlab is used to get the π-equivalent circuit model parameters at each frequency point. The SOI CMOS inductor shows better performance characteristics in terms of Q-factor and self-resonance frequency.

متن کامل

Modeling Techniques for Strained CMOS Technology

Downscaling of MOSFETs as institutionalized by Moore's law is successfully continuing because of innovative changes in the technological processes and the introduction of new materials. The 32nm MOSFET process technology recently developed by Intel [1] involves new hafnium-based high-k dielectric/metal gates and represents a major change in the technological process since the invention of MOSFE...

متن کامل

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology

This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems

سال: 2004

ISSN: 0385-4221,1348-8155

DOI: 10.1541/ieejeiss.124.277