InAs∕InGaAsP sidewall quantum dots on shallow-patterned InP (311)A
نویسندگان
چکیده
منابع مشابه
Self-Assembled InAs Quantum Dots on Patterned InP Substrates
The size distribution of self-assembled InAs quantum dots grown on (001) InP under the StranskiKrastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific locations. As the dimensions of the patterned areas are decreased from 1000 nm down to 50 nm or less, scanning electron microscopy reveals a gradual increase in the sp...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2006
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.2345045