Low temperature annealing of electron irradiated germanium

Threshold energy for atomic displacement in electron irradiated germanium

2014 n-type germanium has been irradiated with electrons of various energies in the range 0.5 to 3 MeV. Using transient capacitance measurements we observed four majority carrier traps associated with levels at 0.27 eV (E1), 0.39 eV (E2), 0.35 eV (E4), 0.32 eV (E5) below the conduction band. We have studied the variations of the introduction rates of these traps with the energy of irradiation. ...

Low-Temperature Annealing of ArsenidPhosphoms Junctions

The formation of arsenic and phosphorus junctions is an important process step in modern device fabrication. The accurate prediction of the vertical and lateral profile is crucial for optimization of the device behavior and reliability. Experimental data show that the damage from implantation of the dopant species has an important and controlling effect on the final profile during low-temperatu...

Low-temperature dephasing in irradiated metallic wires

Low-bias electron transport properties of germanium telluride ultrathin films

Related Articles P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory Appl. Phys. Lett. 102, 063103 (2013) Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction Appl. Phys. Lett. 102, 031914 (2013) Effects of grain microstructure on magnetic properties in FePtAg-C media for heat assisted magne...

Low temperature stress-induced crystallization of germanium on plastic

Crystallization of a-Ge was performed on flexible plastic substrates at temperatures as low as 130 8C. Copper has been primarily used as the seed of crystallization, while an external stress was applied onto the flexible substrate to enhance the crystallization. The substrates used for this study were mainly 0.1 mm thick Polyethylene terephthalate (PET) films, which remain flexible during post ...