P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications
نویسندگان
چکیده
منابع مشابه
Ultraviolet Lasers Realized via Electrostatic Doping Method
P-type doping of wide-bandgap semiconductors has long been a challenging issue for the relatively large activation energy and strong compensation of acceptor states in these materials, which hinders their applications in ultraviolet (UV) optoelectronic devices drastically. Here we show that by employing electrostatic doping method, hole-dominant region can be formed in wide bandgap semiconducto...
متن کاملHigh p-type doping of ZnBeSe using a modified delta-doping technique with N and Te
High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs ~001! substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A ~132! reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs ~234! surface. A high p-type doping level of 1.5310 cm was achieved for ~N1Te! triple-delta doping ~d doping! of ZnBeSe epila...
متن کاملEvidence for p-type doping of InN.
The first evidence of successful p-type doping of InN is presented. It is shown that InN:Mg films consist of a p-type bulk region with a thin n-type inversion layer at the surface that prevents electrical contact to the bulk. Capacitance-voltage measurements indicate a net concentration of ionized acceptors below the -type surface. Irradiation with 2 MeV He+ ions is used to convert the bulk of ...
متن کاملOxygen-Interstitials and Group-V Element Doping for p-Type ZnO
In realizing devices using ZnO, a key challenge is the production of p-type material. Substitution of oxygen by a group-V impurity is thought to result in deep acceptor levels, but a candidate made up from a complex of a group-V impurity (P, As, Sb) on a Zn site coupled with two vacant Zn sites is widely viewed as a candidate. We show using density-functional simulations that in contrast to suc...
متن کاملEnhancement of p-type doping of ZnSe using a modified „N¿Te...d -doping technique
Delta doping techniques have been investigated to enhance the p-type doping of ZnSe. Tellurium was used as a codopant for improving the nitrogen doping efficiency. The net acceptor concentration (NA2ND) increased to 1.5310 18 cm using single d doping of N and Te ~N1Te!, while it was limited to 8310 cm by d doping of N alone. A promising approach was developed in which three consecutive d-doped ...
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ژورنال
عنوان ژورنال: Journal of Electronic Materials
سال: 2005
ISSN: 0361-5235,1543-186X
DOI: 10.1007/s11664-005-0249-4