Temperature-Scaling Theory for Deep-Submicron Channel MOSFET Operated at Low Temperature
نویسندگان
چکیده
منابع مشابه
Temperature scaling concept of MOSFET
Lowering both the threshold voltage (Vth) and subthreshold swing (S) at the same time is essentially required for O.1pm and below O.lym MOSFETs with low supply voltage. In this paper, we discuss a temperature scaling concept of MOSFET and the device characteristics of the fabricated 77K MOSFETs. In the temperature scaling concept, the physical quantities relating to potential are scaled with op...
متن کاملMOSFET Characteristics at Cryogenic Temperature
Efficiency is a large concern in power electronics but size and weight must be taken into consideration as well. Power devices in need of thermal sinks for appropriate performance will affect both size and weight. MOSFET devices are the main components in the power electronics world because of their comparatively promising characteristics in power loss and switching performance. The objective o...
متن کاملGreen Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature
Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...
متن کاملEffects of Temperature in Deep-Submicron Global Interconnect Optimization
The resistance of on-chip interconnects and the current drive of transistors is strongly temperature dependent. As a result, the interconnect performance is affected by the temperature in a sizeable proportion. In this paper we evaluate thermal effects in global RLC interconnects and quantify their impact in a standard optimization procedure in which repeaters are used. By evaluating the differ...
متن کاملA New “Critical-Current at Linear-Threshold” Method for Direct Extraction of Deep-Submicron MOSFET Effective Channel Length
A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“Icrit @ Vt0”) based on the maximum-gm definition. With a simple calibration of the channel sheet resistance from the long-channel Icrit data, the effective channel length of any short-channel device on the sa...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEJ Transactions on Electronics, Information and Systems
سال: 1990
ISSN: 0385-4221,1348-8155
DOI: 10.1541/ieejeiss1987.110.7_413