Modification of the CBCM Method
نویسندگان
چکیده
This paper deals with a modification of the CBCM method for floating nonlinear device characterization. Closed form analytical formulae for the estimation of CBCM errors due to parasitic charge injection are presented. A test chip implementing the method was designed and manufactured in the 0.35μm CMOS process. Key-Words: Charge-Based Capacitance Measurements, MOS characterization, Test Structures
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