The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] th...

in this paper, the temperature dependence of some characteristics of cylindrical gate-all-around si nanowire field effect transistor (gaa-si-nwfet) is investigated to representing the temperature nano-sensor structures and improving their performance. firstly, we calculate the temperature sensitivity of drain-source current versus the gate-source voltage of gaa-si-nwfet to propose the temperatu...

This paper presents a new ?-Ga2O3 Junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (?DG-JL-FET) with an embedded P+ packet at the oxide layer (PO-?DG-JL-FET) for high-frequency applications. Our goal is to achieve efficient volume depletion region by placing of silicon. We show that proposed structure has subthreshold swing ? 64 mV/decade. It suppressed band-to-band tu...

In this study, a model of a Schottky-barrier carbon nanotube fieldeffect transistor (CNT-FET), with ferromagnetic contacts, has been developed. The emphasis is put on analysis of current-voltage characteristics as well as shot (and thermal) noise. The method is based on the tight-binding model and the nonequilibrium Green’s function technique. The calculations show that, at room temperature, th...