and Introduction: There are currently no electrically-pumped semiconductor lasers that can operate in the 1-5 terahertz (THz) spectral range at room temperature. An alternative method of producing room temperature THz light is based on intra-cavity difference frequency generation (DFG) in dual wavelength mid-infrared quantum cascade lasers. Our THz DFG sources can provide tunable output of over...

The III–V InP/InGaAsP/InGaAs material family is important for photonic devices due to its optical emission and absorption in the 1.55 1.3 μm telecommunication bands interconnects. However, InGaAsP/InGaAs generally suffer from relatively high surface recombination velocity—compared Si [Das et al., 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) (IEEE, Calgary, AB, 2020), pp. 1167–1170]...

The mid-infrared spectral region can be covered by quantum cascade (QC) semiconductor lasers, where the emission wavelength is tailored by bandstructure engineering. For a detailed review on QC lasers see Ref. [1]. Their emission energy is well below the band gaps of the hosting material system. Typical GaAs QC lasers operate in the mid-infrared regime with corresponding energies of ~100 meV, w...

Strained-layer superlattices (SL's) made up of alternate GaP and InP layers constitute a system where the strain is symmetrized when grown on GaAs substrates. While both components present a large lattice mismatch to GaAs ( —3.6% GaP, +3.8% InP) giving rise to large biaxial deformations in the individual layers, the net value of strain in the whole SL is very small, thus favoring their stabilit...

iii List of appended papers v

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-groo...

In this paper, we have proposed an all-optical wavelength triplexer using photonic crystal resonant cavities. The photonic crystal rods is composed of three layers, InP-InGaAsP-InP, the substrate consists of InP with a refractive index of nInP=3.169 and the guiding layer is InGaAsP, with an index of nInGaAsP=3.364. The guiding layer is 0.510μm thick, and it has an InP top cladding of 1.500μm. T...

Ice nucleating particles active at −8 ◦C or warmer (INP−8) are produced by plants and by microorganisms living from and on them. Laboratory studies have shown that large numbers of INP−8 are produced by decaying leaves. At three widely dispersed locations in Northwestern Eurasia, we saw, from an analysis of PM10 filter samples, that seasonal median concentrations of INP−8 in the boundary layer ...

Network virtualization can offer more flexibility and better manageability for the future Internet by allowing multiple heterogeneous virtual networks (VN) to coexist on a shared infrastructure provider (InP) network. A major challenge in this respect is the VN embedding problem that deals with the efficient mapping of virtual resources on InP network resources. Previous research focused on heu...

We present pseudopotential plane-wave electronic-structure calculations on InP quantum dots in an effort to understand quantum confinement and surface effects and to identify the origin of the long-lived and redshifted luminescence. We find that ~i! unlike the case in small GaAs dots, the lowest unoccupied state of InP dots is the G1c-derived direct state rather than the X1c-derived indirect st...