In-network processing (INP) is being used to cope with the large volume of data streams that need to be analyzed in real-time of data transmission rather than being stored and computed by powerful servers. In this paper, we combine the programmable switch OpenFlow with network virtualization and design the INP platform OFIAS, i.e., OpenFlow In A Slice. With the flexibility of OpenFlow and the s...

InAlAs/InGaAs Modulation-Doped Field-Effect Transistors (MODFETs) on InP have recently emerged as an optimum choice for a variety of microwave and photonics applications. This is because the outstanding transport properties of InGaAs have yielded devices with very low-noise and high-frequency characteristics. Unfortunately, the low breakdown voltage of InAlAs/InGaAs MODFETs on InP (typically le...

Tremendous increment in the high speed demands of data rate results in the continuous development in Type II InP/GaAsSb/InP Dual Heterojunction Bipolar Transistor Device. Physical based two dimensional device simulators, Atlas tool is used to study the DC operation and performance of InP/GaAsSb Dual Heterojunction Bipolar Transistor Device approaching Giga Hertz frequency range. Gallium Arsenid...

The potentiality of millimter-wave (mm-wave) double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on a wide bandgap (WBG) semiconductor material, Gallium Phosphide (GaP) has been explored in this paper. A non-sinusoidal voltage excited (NSVE) large-signal simulation method has been used to study the DC and high frequency characteristics of DDR GaP IMPATTs dsigned to ope...

The in-plane effective electron mass (m i) in narrow Ga0.47In0.53As/InP quantum wells is strongly dependent on the quantization energy. Cyclotron resonance in a series of quantum wells with well widths down to 15 Å reveals a mass enhancement of up to 50% (m i50.065m0) over the bulk value of Ga0.47In0.53As. This effect is caused by the nonparabolicity of the conduction band and wave function pen...

We show that a novel material InNAsP grown on InP is superior for long-wavelength microdisk lasers (and so expected for edge-emitting lasers) because of its larger conduction band offset from the addition of a small amount of nitrogen (0.5%–1%). The maximum temperature of operation for an InNAsP–GaInAsP microdisk laser is 70 C, which is about 120 C higher than that of a similar laser fabricated...

Grazing incidence specular and diffuse X-ray scattering measurements have been used to study variations in polishing of InP single crystal wafers. Excellent agreement between experimental and simulated data is achieved when graded surface layers typically 3081 in thickness, and of higher density than the bulk material, are included. Figuring was found on all samples examined and the width of th...

For the first time a detailed study of hybrid mode-locking in two-section InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-doma...

We studied enhancement and suppression of spontaneous emission in thin-film InGaAs/InP photonic crystal at room temperature. Angular resolved photoluminescence measurements were used to determine experimentally the band structure of conduction band of such a photonic crystal and overall enhancement of spontaneous emission. We demonstrated spontaneous emission enhancement in thin slab photonic c...

Temperature and doping dependencies of electron mobility in InP, GaP and Ga0.52In0.48P structures have been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. Ionized impurity scattering has been treated beyond the Born approximation using the phaseshift analysis. I...