Comparison of optical power, external quantum efficiency in InGaN/GaN UV LEDs at room temperature and liquid nitrogen is carried out. The spectral densities the current low-frequency noise have been investigated. mechanisms carrier transport, formation noise, dependences rates radiative nonradiative recombination temperatures are considered. Keywords: External efficiency, defect tunneling.

A greener solvent acetone is applied to replace DMF and NMP for depositing high-quality perovskite thin films through the formation of an acetone–MAI–PbI 2 intermediate phase.

We present the results of picosecond time-resolved photoluminescence (PL) measurements for GaN/A1Ga1N MQWs with varying structural parameters, grown by metalorganic chemical vapor deposition under the optimal (iaN-like growth conditions. We have shown that the optimal GaN/A1GaN (x 0.2) MQW structures for UV light emitter applications are those with well widths ranging from 12 and 42 A and barri...

Most optoelectronic devices operate at high photocarrier densities, where all semiconductors suffer from enhanced nonradiative recombination. Nonradiative processes proportionately reduce photoluminescence (PL) quantum yield (QY), a performance metric that directly dictates the maximum device efficiency. Although transition-metal dichalcogenide (TMDC) monolayers exhibit near-unity PL QY low exc...

The temperature dependence of the threshold current of InGaAsSb/AlGaAsSb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible f...

Nonradiative recombination processes are the biggest hindrance to approaching radiative limit of open-circuit voltage for wide bandgap perovskite solar cells. In addition high bulk quality, good interfaces and energy level alignment majority carriers at charge transport layer-absorber crucial minimize nonradiative pathways. By tuning lowest-unoccupied molecular-orbital electron layers via use d...

The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide– silicon ~MOS! tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall ~SRH! recombination lifetimes are 18 and 25.8 ms for the rising and falling edges, respectively, and that the ratio for SRH, radiati...