For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit lateral intra-QW carrier diffusion length current spreading. The mainly impacts overall LED efficiency through sidewall nonradiative recombination, especially for $\mu$LEDs. In this paper, we study green, blue, ultraviolet C (UVC) QWs in three dimensions. We solve Poisson...

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit lateral intra-QW carrier diffusion length current spreading. The mainly impacts overall LED efficiency through sidewall nonradiative recombination, especially for $\mu$LEDs. In this paper, we study green, blue, ultraviolet C (UVC) QWs in three dimensions. We solve Poisson...

Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial transparency of the samples due to the Moss–Burstein effect. Temporal evolution of the transmitted luminescence shows virtually no effect of surface recombination b...

In this paper, we present an analytical model of a P-InAs0.36Sb0.20P0.44/ n-InAs/n-InAs single heterostructure light emitting diode (SH-LED) suitable for use as source in gas detection instrumentation system based on optical absorption gas spectroscopy in the mid-infrared spectral region at room temperature. The model takes into account all dominating radiative and non-radiative recombination p...

The mechanisms of carrier injection and recombination in a GaN/InGaN single quantum well light-emitting diodes have been studied. Strong defect-assisted tunneling behavior has been observed in both forward and reverse current– voltage characteristics. In addition to band-edge emission at 400 nm, the electroluminescence has also been attributed to radiative tunneling from band-to-deep level stat...

A key limitation in perovskite solar cell (PSC) performance is suboptimal electronic properties at the perovskite–transport layer (TL) interfaces, which result parasitic nonradiative recombination. Interface recombination depends on concentration of recombination-active defects, but as a event requires both an electron and hole, magnitude sign charge accumulation perovskite–TL heterojunctions a...

Herein, the main factors and mechanisms that limit reliability of gallium nitride (GaN)-based light-emitting diodes (LEDs) are reviewed. An overview defects characterization techniques most relevant for wide-bandgap is provided first. Then, by introducing a catalogue traps deep levels in GaN computer-aided simulations, it shown which types more detrimental radiative efficiency devices. Gradual ...

We report on identification and control of important nonradiative recombination centers in GaNP coaxial nanowires (NWs) grown on Si substrates in an effort to significantly increase light emitting efficiency of these novel nanostructures promising for a wide variety of optoelectronic and photonic applications. A point defect complex, labeled as DD1 and consisting of a P atom with a neighboring ...

In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased QW number, a reduced electron leakage can be achieved and hence the efficiency droop can be reduced when a constant Shockley-Read-Hall (SRH) nonradiative recombination lifeti...