نتایج جستجو برای: voltage stress

تعداد نتایج: 543481  

2010
Hemant Rao Gijs Bosman

Low frequency noise characteristics of gate and drain currents are investigated for prestressed and poststressed AlGaN/GaN high electron mobility transistors. High reverse bias voltage stresses on the gate stack changes both drain and gate current noise. A temporary increase in drain current noise was observed during stress which recovered to prestress level a few weeks later. This is explained...

2000
Qiaoqin Yang Lihua Zhao Hanning Xiao Nanfang Zhao

The relationships of the residual stress versus process parameters of diamond films grown by Hot Filament CVD were investigated by XRD. The intrinsic macrostress in the diamond films was tensile. The tensile stress decreased almost linearly with acetone concentration, and a minimum tensile stress was obtained at a deposition temperature of 9OOOC and 50 V bias voltage. The microstress in the fil...

Journal: :IEICE Transactions 2010
Naoteru Shigekawa Suehiro Sugitani

Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt sh...

پایان نامه :وزارت علوم، تحقیقات و فناوری - موسسه آموزش عالی غیرانتفاعی و غیردولتی سجاد مشهد - دانشکده برق و الکترونیک 1392

این گزارش در مورد انواع شارژپمپ ها که برای ایجاد ولتاژ بالاتر استفاده می شوند و پارامترهای اساسی آنها توضیح می دهد. در نهایت در مورد بازده و ریپل ولتاژ شارژپمپ طراحی شده بحث می شود. ریپل ولتاژ پایین برای بسیاری از مدارات جزو پارامترهای مهم می باشد. اگر ریپل ولتاژ خروجی بسیار بزرگ باشد، عملکرد شارژپمپ که تامین توان می باشد، تنزل پیدا می کند.پارامتر مهم دیگر بازده می باشد. شارژپمپ با بازده پایین،...

2012
Long-Yi Chang Kuei-Hsiang Chao Tsang-Chih Chang

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besi...

2014
Ketul Sutaria Bertan Bakkaloglu Shimeng Yu Chaitali Chakrabarti

i ABSTRACT The aging process due to Bias Temperature Instability (both NBTI and PBTI) and Channel Hot Carrier (CHC) is a key limiting factor of circuit lifetime in CMOS design. Threshold voltage shift due to BTI is a strong function of stress voltage and temperature complicating stress and recovery prediction. This poses a unique challenge for long-term aging prediction for wide range of stress...

Journal: :مجله علوم اعصاب شفای خاتم 0
mandana sadat ghafourian department of electronic & computer engineerin, bioelectric faculty, khaje nasir toosi university of technology, tehran, iran amin noori electrical engineering and biomedical engineering faculty, sadjad university of tecnology, mashhad, iran

anxiety disorders are the most common reasons for referring to specialized clinics. if the response to stress changed, anxiety can be greatly controlled. the most obvious effect of stress occurs on circulatory system especially through sweating. the electrical conductivity of skin or in other words galvanic skin response (gsr) which is dependent on stress level is used; beside this parameter pe...

پایان نامه :دانشگاه بین المللی امام خمینی (ره) - قزوین - دانشکده علوم پایه 1392

in this thesis,spin dependend transport and electron transport through of ng/sg(graphene/ superconductor graphen) are studied in the junction of ng/fgt/sg. due to andreev reflection conductance increases in the presence of superconductor graphene.also, by applying a voltage gate on a superconductor, fermi level shifts and the conductance is independent of ferromagnatic substrate. also, the cond...

2014
Yubin Hou Qingyou Lu

We have measured the coefficient of the voltage induced frequency shift (VIFS) of a 32.768 KHz quartz tuning fork. Three vibration modes were studied: one prong oscillating, two prongs oscillating in the same direction, and two prongs oscillating in opposite directions. They all showed a parabolic dependence of the eigen-frequency shift on the bias voltage applied across the fork, due to the vo...

2003
Christian Jesus B. FAYOMI Gordon W. ROBERTS Mohamad SAWAN

This paper presents a sample-and-hold circuit based on a novel implementation of the bootstrapped low-voltage analog CMOS switch. The heart of this circuit is a new low-voltage and low-stress CMOS clock voltage doubler. Through the use of a dummy switch, the charge injection induced by the bootstrapped switch is greatly reduced resulting in improved sample-and-hold accuracy. Simulation results ...

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