In this paper, we have investigated the turn-around effect of the threshold voltage (Vth) shift in the case of an n-type long channel MOSFET during hot-carrier stress. This effect is explained by the interplay between interface states and oxide traps, i.e. by the partial compensation of the rapidly created oxide charges by the more slowly created interface states. Significant hole trapping is o...

This paper focuses on the study of DC-to-DC converters, which are suitable for low-voltage high-power applications. The output voltages generated by renewable energy sources such as photovoltaic arrays and fuel cell stacks are generally low and required to be increased to high voltage levels. Development of DC-to-DC converters, which provide high step-up voltage conversion ratios with high effi...

A theoretical model to interpret appearances of the threshold voltage shift in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT’s) is developed to better understand the instability of a-Si:H TFT’s for the driving transistors in active matrix organic light-emitting diode (AMOLED) displays. This model assumes that the defect creation is proportional to the carrier density in a-S...

This paper presents the design, fabrication and characterization of an RF MEMS switch. Low actuation voltage and high isolation of the switch were achieved by exploiting buckling and bending effects induced by well-controlled residual stress. The effects of residual stress on improving the switch performance have been investigated using both analytical and numerical methods. The proposed RF swi...

We have investigated the surface morphology of electrically stressed AlGaN/GaN high electron mobility transistors using atomic force microscopy and scanning electron microscopy after removing the gate metallization by chemical etching. Changes in surface morphology were correlated with degradation in electrical characteristics. Linear grooves formed along the gate edges in the GaN cap layer for...

A Conventional Boost Converter is not capable for obtain a high voltage gain even extreme duty cycle maintain the triggering circuit diagram. In order to increase the voltage gain for the new Boost converter from the solar power application. In this paper boost converter specialty is achieved 10 times that of input voltage and more than 10 times of input voltages is possible from output side by...

This paper presents the design and preliminary results of a full differential sample-and-hold circuit based on the "flipped voltage follower" (FVF) cell. The heart of this circuit is a fully differential low-voltage OTA based on FVF technique. The use of the FVF reduces the supply power requirements in the OTA. To overcome input sampling switches limitation imposed by the low supply voltage we ...

Electrical characteristics of GaAs metal–oxide–semiconductor field effect transistor with atomic layer deposition deposited Al2O3 gate dielectric have been investigated. The IV characteristics were studied after various constant voltage stress (CVS) has been applied. A power law dependence of the gate leakage current (Ig) on the gate voltage (Vg) was found to fit the CVS data of the low positiv...