A novel high step-up dc–dc converter for fuel cell energy conversion is presented in this paper. The proposed converter utilizes a multiwinding coupled inductor and a voltage doubler to achieve high step-up voltage gain. The voltage on the active switch is clamped, and the energy stored in the leakage inductor is recycled. Therefore, the voltage stress on the active switch is reduced, and the c...

Stress-Induced Leakage current (SILC) on ultra-thin SiO2 was measured in-situ by using a high-resolution measurement technique in a special designed chamber at 100°C with temperature stability of 0.002°C. A gate stress voltage range was measured from –3.1V down to –1.5V in steps of 0.2V. Even at these low voltages, no significant change in the degradation mechanism could be observed. Extrapolat...

A novel ZVZCS isolated dual series-resonant active-clamp dc–dc converter is proposed to obtain high efficiency. The proposed converter employs an active-clamp technique, while a series-resonant scheme controls the output voltage with the complementary pulse width modulation controller. The active-clamp circuit serves to recycle the energy stored in the leakage inductance or the magnetizing ...

Multilevel Inverters has big placement advantages in Power Electronics and its application can be mentioned to FACTS tools such as UPFC – D-STATCOM. Therefore, nowadays Multilevel Inverters have created vast field’s research and researchers are trying to present appropriate structures with fewer keys and greater advantages. The main advantages of Multilevel Inverters mentioned are low-key volta...

In this paper, a new structure of step-up dc-dc converter by using coupled inductor and active-clamped circuit is proposed. The proposed converter generates high voltage gain in comparison with the conventional dc-dc converters. Duo to using active-clamped circuit in the proposed topology the voltage stress on main switch is reduced. In addition the zero voltage switching (ZVS) in ON-state of m...

A New electrical method, using charge-pumping (CP) technique under bias thermal stress (BTS), has been described in this paper. This technique is based on the charge-pumping measurement which in turn used to extract the flat-band voltage before and after an applied bias voltage at high temperature. The obtained flat band voltage shift, that is due to redistribution of the mobile ionic charges, ...

An improved active snubber cell is proposed for ZVT-ZCT PWM DC-DC boost converter. Zero voltage transition (ZVT) turn on and zero current transition (ZCT) turn off is provided by this active snubber cell. There is no extra current or voltage stresses on the main switch. Also, zero current switching (ZCS) turn on ZCT turn off is provided for the auxiliary switch. Although there is no extra volta...

We report on the defect generation under constant voltage stress in La2O3/HfO2 gate stacks grown on Germanium (001) substrates by molecular beam deposition utilizing a stress and sense technique. A voltage range from 0.5V up to 2.4V was used for the measurements. At low applied gate voltages, the stress induced current decrease could be explained by a field lowering model due to charge trapping...

Article history: Received 23 May 2015 Accepted 16 June 2015 Available online xxxx Weperformed thermal and constant voltage stress on oligothiophene-based p-type organic thin-film-transistors. The devices subjected to thermal stress without bias showed limited variations. The bias stress performed at 20 °C inducedmonotonic charge trapping, andmobility degradation. The devices subjected to simult...