نتایج جستجو برای: voltage stress

تعداد نتایج: 543481  

2013
Byamakesh Nayak Saswati Swapna Dash

This paper presents the analysis for different control techniques in Z-source inverters. The voltage gain versus modulation index from simulation result is compared with the mathematical calculated voltage gain. Further detailed analysis of %THD, %harmonics of output voltage at different modulation indexes for different boosting techniques of a Z-source inverter are also performed with respect ...

پایان نامه :دانشگاه آزاد اسلامی واحد علوم پزشکی تهران - دانشکده پزشکی 1389

هدف : هدف از این پایان نامه بررسی تغییرات الکترورتینوگرام در بیماران مبتلا به گلوکوم است . زیرا گلوکوم بیماری است که اگر دیر تشخیص داده شود یا درمان نشود منجر به کوری می شود . روش مطالعه : این مطالعه یک مطالعه مشاهده ای – توصیفی – تحلیلی – مقطعی طراحی شده که نمونه شامل 25 فرد مبتلا به گلوکوم و 25 فرد سالم بوده است نمونه ها بصورت تصادفی ساده از بین مراجعین به بیمارستان های آموزشی دانشگاه آزا...

2016
Yong-Seng Wong Jiann-Fuh Chen Kuo-Bin Liu

A high step-up DC-to-DC converter that integrates an isolated transformer and a switched-clamp capacitor is presented in this study. The voltage stress of the main power switch should be clamped to 1/4 V by using the turn ratio and switched-clamp capacitor of an isolated transformer to achieve a high voltage gain. In addition, a passive clamp circuit is employed reduce voltage stress on the mai...

Journal: :Microelectronics Reliability 2012
William McGenn Michael J. Uren Johannes Benedikt Paul J. Tasker

This paper reports on the development of an RF IV waveform based stress test procedure. DC and low-voltage RF characterisation was carried out before and after high power RF stress. RF waveform measurements showed that the exact change in the RF load line induced during RF degradation cannot be directly inferred from the DC or low power RF measurement. The RF degradation takes the form of a kne...

2008
HAMID BENTARZI

A Novel electrical method, using charge-pumping (CP) technique under bias thermal stress (BTS), has been described in this work. This technique is based on the measurement of the flat-band voltage before and after an applied voltage at high temperature through the use of charge-pumping current. The measured flat band shift, that may be due to effect of certain types of the oxide charges, may be...

This work proposes a high step-up interleaved dc/dc topology utilizing a VM (voltage multiplier) cell suitable for PV applications. The VM cells D/C (Diode/Cap.) are cascaded among the phases to approach a high voltage gain. Besides, the voltage converting ratio of the presented structure can be improved by extending the VM cells and it also leads to drop in the normalized voltage stress throug...

2015
N. Vijayasarathi S. Santhiya

The class Φ2 inverter is a new switched mode type of resonant inverter. This inverter is applicable for very high frequency application. In this paper, it proposes class Φ2 inverter reduced the voltage stress, and improve the dynamic response. The class E resonant inverter is not suitable for high frequency application, because it produce high voltage stress across the switch. The suitable ball...

In this paper, a new transformerless buck-boost converter based on ZETA converter is introduced. The proposed converter has the ZETA converter advantages such as, buck-boost capability and input to output DC insulation. The suggested converter voltage gain is higher than the classic ZETA converter. In the presented converter, only one main switch is utilized. The proposed converter offers low v...

2014
H. Hussin N. Soin M. F. Bukhori S. Wan Muhamad Hatta Y. Abdul Wahab

We present a simulation study on negative bias temperature instability (NBTI) induced hole trapping in E' center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well...

Journal: :Microelectronics Reliability 2013
Thomas Aichinger Michael Nelhiebel Tibor Grasser

We reexamine degradation and recovery dynamics in the negative bias temperature instability (NBTI) of p-channel metal oxide semiconductor field effect transistors (PMOSFETs) by making use of the recently developed in situ polyheater technique. The capability of switching the device temperature extremely fast and almost arbitrarily allows for measuring differently stressed devices directly after...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید