Two dimensional (2D) materials with a monolayer of atoms represent an ultimate control of material dimension in the vertical direction. Molybdenum sulfide (MoS2) monolayers, with a direct bandgap of 1.8 eV, offer an unprecedented prospect of miniaturizing semiconductor science and technology down to a truly atomic scale. Recent studies have indeed demonstrated the promise of 2D MoS2 in fields i...

We investigate the photocurrent generation mechanisms at a vertical p-n heterojunction between black phosphorus (BP) and molybdenum disulfide (MoS2) flakes through polarization-, wavelength-, and gate-dependent scanning photocurrent measurements. When incident photon energy is above the direct band gap of MoS2, the photocurrent response demonstrates a competitive effect between MoS2 and BP in t...

The structural, electronic, transport and optical properties of black phosphorus/MoS2 (BP/MoS2) van der Waals (vdw) heterostructure are investigated by using first principles calculations. The band gap of BP/MoS2 bilayer decreases with the applied normal compressive strain and a semiconductor-to-metal transition is observed when the applied strain is more than 0.85 Å. BP/MoS2 bilayer also exhib...

Molybdenum disulfide (MoS2) has been attracting much attentions due to its excellent electrical and optical properties. We report here the synthesis of large-scale and uniform MoS2 nanosheets with vertically standing morphology using chemical vapor deposition method. TEM observations clearly reveal the growth mechanism of these vertical structures. It is suggested that the vertical structures a...

To progress from laboratory research to commercial applications, it is necessary to develop an effective method to prepare large quantities and high-quality of the large-size atomically thin molybdenum dichalcogenides (MoS2). Aqueous-phase processes provide a viable method for producing thin MoS2 sheets using organolithium-assisted exfoliation; unfortunately, this method is hindered by changing...

Two-dimensional transition metal dichalcogenides (TMDCs) like MoS2 are promising candidates for various optoelectronic applications. The typical photoluminescence (PL) of monolayer MoS2 is however known to suffer very low quantum yields. We demonstrate a 10-fold increase of MoS2 excitonic PL enabled by nonradiative energy transfer (NRET) from adjacent nanocrystal quantum dot (NQD) films. The un...

Molybdenum disulfide (MoS2) is one of the most important two-dimensional materials after graphene. Monolayer MoS2 has a direct bandgap (1.9 eV) and is potentially suitable for post-silicon electronics. Among all atomically thin semiconductors, MoS2’s synthesis techniques are more developed. Here, we review the recent developments in the synthesis of hexagonal MoS2, where they are categorized in...

We report a robust method for engineering the optoelectronic properties of many-layer MoS2 using low-energy oxygen plasma treatment. Gas phase treatment of MoS2 with oxygen radicals generated in an upstream N2 -O2 plasma is shown to enhance the photoluminescence (PL) of many-layer, mechanically exfoliated MoS2 flakes by up to 20 times, without reducing the layer thickness of the material. A blu...

Atomically thin two-dimensional semiconductors such as MoS2 hold great promise for electrical, optical and mechanical devices and display novel physical phenomena. However, the electron mobility of monoand few-layer MoS2 has so far been substantially below theoretically predicted limits, which has hampered efforts to observe its intrinsic quantum transport behaviours. Potential sources of disor...

MoS2 is a layered two-dimensional material with strong spin-orbit coupling and long spin lifetime, which is promising for electronic and spintronic applications. However, because of its large band gap and small electron affinity, a considerable Schottky barrier exists between MoS2 and contact metal, hindering the further study of spin transport and spin injection in MoS2. Although substantial p...