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We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0:998C0:002 on an n-type Si substrate. Epitaxial Ge0:998C0:002 was grown on a (100) Si substrate by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification. The I-V characteristics of the p-GeC/n-Si diode indicate a reasonable reverse satura...
This study evaluates two mechanical properties, tensile strength and tear strength, of maxillofacial materials reinforced with functional polyhedral silsesquioxane (POSS) nanoparticles at 0.0, 0.5, 1.0, 2.0, and 5.0% (mass/mass) loading. Adding POSS was found to significantly affect the overall tensile strength and extensibility of the maxillofacial material. Significant differences were found ...
The growth of single-walled carbon nanotubes (SWCNTs) with predefined structure is of great importance for both fundamental research and their practical applications. Traditionally, SWCNTs are grown from a metal catalyst with a vapor-liquid-solid mechanism, where the catalyst is in liquid state with fluctuating structures, and it is intrinsically unfavorable for the structure control of SWCNTs....
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