نتایج جستجو برای: 110
تعداد نتایج: 40696 فیلتر نتایج به سال:
We show that the problem of predicting t steps of the 1D cellular automaton Rule 110 is P-complete. The result is found by showing that Rule 110 simulates deterministic Turing machines in polynomial time. As a corollary we find that the small universal Turing machines of Mathew Cook run in polynomial time, this is an exponential improvement on their previously known simulation time overhead.
The Trid neighbourhood is a three cell neighbourhood on a 2dimensional lattice, and is a subset of the Quad neighbourhood. I show that, with an appropriately prepared initial configuration of “diagonal stripes”, a given elementary CA can be simulated by the two state Trid neighbourhood CA whose local update rule is precisely that of the elementary CA. Thus, invoking Cook’s universality result f...
The broken symmetry at surfaces can give rise to a nonzero spin-orbit splitting of valence bands. We observe such a splitting of the d-derived surface state on W(110) and, to a lesser extent, on Mo(110), and follow the evolution of the splitting as monovalent atoms are adsorbed. The observed evolution is directly relevant to recent observations of altered orbital magnetic structure versus adsor...
S. S. Tsirkin,1 S. V. Eremeev,1,2 and E. V. Chulkov3,4 1Tomsk State University, Prospekt Lenina 36, 634050 Tomsk, Russia 2Institute of Strength Physics and Materials Science, Prospekt Academicheskii 2/4, 634021 Tomsk, Russia 3Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain 4Departamento de Fı́sica de Materiales and Centro de Fı́sica de Materiales ...
Hole mobility and flicker noise characteristics of uniaxially strained (110)/〈110〉 Si0.75Ge0.25 pFINFETs (SSGOI0.25) are investigated in this letter. Equivalent gate referred flicker noise in SSGOI0.25 is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in SSGOI0.25 and in Si pFIN...
تستند تأثيرات الحجم و درجة الحرارة على عدد من الفرضيات المختلفة والتي تعتمد كيفية وصف الإثارة المغناطيسية لنظام البرم حسب نماذجه المعروفة. ففي صيغة بلوخ وعند درجات المنخفضة تم الاعتماد نموذج هايزنبيرك لوصف المجـال المغناطيسي الفـائق الدقـة(Magnetic hyperfine field) Bhf بوجود البارامترات: Bhf(0) مجال الحالة الأرضية (ground-state magnetic b (spin wave parameter)، وفي الأغشية الرقيقة في حالة المجس...
Growth and surface morphology of epitaxial Fe(110)/MgO(111)/Fe(110) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(110) resulting in dense MgO(111) films at room temperature as well as at 250 C. As observed by STM, initial deposition of MgO le...
Quasiparticle corrections to the electronic properties of anion vacancies at GaAs(110) and InP(110).
We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle corrections to the Kohn-Sham eigenvalues of density-functional theory. Its applicability is demonstrated for anion vacancies at the (110) surfaces of III-V semiconductors. We find the (+/0) charge-transition level to be 0.49 eV...
Ratiometric laser induced fluorescence (LIF) thermometry is developed as a tool for temperature measurements using microscale visualization methods. Rhodamine B (RhB) and Rhodamine 110 (Rh110) are used as the temperature-dependent and temperature-independent dyes, respectively. The temperature responses of the two dyes are carefully measured as a function of concentration. The traditional twody...
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