The uncontrollable rupture of the filament accompanied with joule heating deteriorates the resistive switching devices performance, especially on endurance and uniformity. To suppress the undesirable filaments rupture, this work presents an interface engineering methodology by inducing a thin layer of NiOx into a sandwiched Al/TaOx/ITO resistive switching device. The NiOx/TaOx interface barrier...

Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaOx/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching cycle uniformity with a small operatio...

A method has been devised to measure the specific membrane resistance of single human red cells. The cells were sucked into a 3 to 5 micron diameter pore in the end of a glass tube. By passing a small current through the cells, the total cell resistance was measured. The dimensions of the cell were measured optically and the specific membrane resistance was then calculated. Leakage of current b...

Solid-state nanopores have been widely employed in sensing applications from Coulter counters to DNA sequencing devices. The analytical signal in such experiments is the change in ionic current flowing through the orifice caused by the large molecule or nanoparticle translocation through the pore. Conceptually similar nanopipette-based sensors can offer several advantages including the ease of ...

We prove that adding to the pure-calculus a non-deterministic choice operator and a standard numeralsystem we obtain a language which internally discriminates two-terms if and only if they have diierent BB ohm trees.

The search for nonvolatile memory concepts has a massive impact on the development of nanoscopic systems with adjustable electrical properties. Capacitor-like structures composed of insulating materials sandwiched between metallic electrodes are envisioned to overcome the limitations associated with conventional charge storage devices and may open the road to neuromorphic computing. Together wi...

We fabricated a novel in-line conductive atomic force microscopy (C-AFM), which can analyze the resistive failures and examine process variance with an exact-positioning capability across the whole wafer scale in in-line DRAM fabrication process. Using this in-line C-AFM, we introduced a new, non-destructive diagnosis for resistive failure in mobile DRAM structures. Specially, we focused on the...

An undoped organic small-molecule 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) and a kind of nanocomposite blending poly(methyl methacrylate) (PMMA) into PBD are employed to implement bistable resistive switching. For the bistable resistive switching indium tin oxide (ITO)/PBD/Al, its ON/OFF current ratio can touch 6. What is more, the ON/OFF current ratio, approaching to 10(4...

Growing of epitaxial Fe50Mn50/Fe/Mo/R-sapphire films was performed with a new configuration of two in-plane easy axes of Fe(001)-layer magnetization in which application of annealing in a magnetic field forms an unidirectional anisotropy. The microstructures made from these films exhibited an exchange bias 25-35 G along an exchange field generated at antiferromagnet/ferromagnet (AFM/FM) interfa...

Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the f...