نتایج جستجو برای: aln

تعداد نتایج: 3323  

Journal: :Optics express 2009
Sang-Mook Kim Tae-Young Park Seong-Ju Park Seung-Jae Lee Jong Hyeob Baek Yun Chang Park Gun Young Jung

Nanopatterned aluminum nitride (NP-AlN) templates were used to enhance the light extraction efficiency of the light-emitting diodes (LEDs). Here, the NP-AlN interlayer between the sapphire substrate and GaN-based LED was used as an effective light outcoupling layer at the direction of bottom side and as a buffer layer for growth of GaN LEDs. The cross-sectional transmission electron microscopy ...

Journal: :European Journal of Pharmaceutics and Biopharmaceutics 2021

Nanoarchaeosomes are non-hydrolysable nanovesicles made of archaeolipids, naturally functionalised with ligand for scavenger receptor class 1. We hypothesized that nitrogenate bisphosphonate alendronate (ALN) loaded nanoarchaeosomes (nanoarchaeosomes(ALN)) may constitute more efficient macrophage targeted apoptotic inducers than ALN nanoliposomes (nanoliposomes (ALN)). To aim, was in cholestero...

2003
Eunhee Kim Starr Roxanne Hiltz Julian Scher Murray Turoff

Text-based discussions in Asynchronous Learning Networks (ALN) may not be an optimal learning environment for all learners. This paper discusses the reasons why and explores the possibility of applying multimedia to ALN. The contribution of this paper is to provide ways of diversifying the ALN learning environment to accommodate the needs of diverse learners having different learning styles.

2015
Meng Qi Guowang Li Vladimir Protasenko Pei Zhao Jai Verma Bo Song Satyaki Ganguly Mingda Zhu Zongyang Hu Xiaodong Yan Alexander Mintairov Huili Grace Xing Debdeep Jena

on AlN using AlN/GaN/AlN quantum wells and N isotopes Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, and Debdeep Jena Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA Ioffe Physico-Technical Institute, Russian Academy of Sciences, Saint Petersbu...

Journal: :The Journal of clinical endocrinology and metabolism 2005
L M Ward A E Denker A Porras S Shugarts W Kline R Travers C Mao F Rauch A Maes P Larson P Deutsch F H Glorieux

CONTEXT Alendronate (ALN) is a bisphosphonate compound that can be administered orally and has potential use in pediatric osteoporotic conditions. OBJECTIVE The objective was to evaluate the pharmacokinetics and single-dose tolerability of ALN in children with osteogenesis imperfecta. DESIGN ALN was administered iv and orally in a two-period, randomized crossover study, with doses separated...

2017
Jun Zhang David J. Sellmyer

Cr-doped AlN thin fi lms were epitaxially grown on Al2O3(001) substrates at lowtemperature by reactivemagnetron sputtering,and their magnetic properties were investigated. Extensive x-ray diffraction studies indicated that the fi lms have a wurtzite-type hexagonal structure and are (001) oriented, with an epitaxial relationship of the [100] direction of the fi lms along the [110] direction of A...

Journal: :Chemical communications 2008
Weiwei Lei Jian Zhang Dan Liu Pinwen Zhu Qiliang Cui Guangtian Zou

Novel three-dimensional AlN microroses, for the first time, have been synthesized via direct reaction between Al and N(2) in arc plasma without any catalyst and template.

2015
A. P. Shapovalov I. V. Korotash E. M. Rudenko F. F. Sizov

Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF plasma of helicon discharge allowed us to deposit AlN coatings on thermolabile substrates, significantly increasing the deposition rate. A study of spectral properties of AlN fi...

2011
Lang Niu Zhibiao Hao Jiannan Hu Yibin Hu Lai Wang Yi Luo

The quantum-confined stark effect induced by polarization has significant effects on the optical properties of nitride heterostructures. In order to improve the emission efficiency of GaN/AlN quantum dots [QDs], a novel epitaxial structure is proposed: a partially relaxed GaN layer followed by an AlN spacer layer is inserted before the growth of GaN QDs. GaN/AlN QD samples with the proposed str...

2017
Xingpeng Liu Bin Peng Wanli Zhang Jun Zhu Xingzhao Liu Meng Wei

In order to develop a film electrode for the surface acoustic wave (SAW) devices working in high temperature, harsh environments, novel AlN/Pt/ZnO multilayers were prepared using pulsed laser deposition (PLD) systems on langasite (LGS) substrates. The AlN film was used as a protective layer and the ZnO buffer layer was introduced to improve the crystal quality of Pt films. The results show that...

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