Atomic-scale spin-polarized scanning tunneling microscopy results on the manganese nitride Mn3N2 (010) surface are presented. The images show the row-wise antiferromagnetic structure of the surface. It is shown that the bias voltage between tip and sample affects both the magnetic and non-magnetic components of the height profile. In particular, a reversal of the magnetic contrast is shown to o...

We study the electrical transport properties of well-contacted ballistic single-walled carbon nanotubes in a three-terminal configuration at low temperatures. We observe signatures of strong electron-electron interactions: the conductance exhibits bias-voltage-dependent amplitudes of quantum interference oscillation, and both the current noise and Fano factor manifest bias-voltage-dependent pow...

We demonstrate that voltage-controlled negative refractive index can be obtained in self-organized InAs quantum dot systems. As the bias voltage is changed, the refractive index can be adjusted and controlled continuously from negative to positive and simultaneously the loss of light in the system will be small. The single-negative index materials and the double-negative index materials can be ...

Solid tantalum capacitors are polarized devices designed to operate only under forward voltage bias conditions. Application of reverse voltage may produce high leakage currents with potentially destructive results. Such misapplications of these devices sometimes occur during bench testing, troubleshooting of engineering modules and/or during some malfunctions in operating systems. However, more...

Organic electronic synapses (e-synapses) based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/ graphene quantum dot (GQD) nanocomposites are fabricated by using a solution method. Current–voltage (I–V) curves for the devices under dual positive bias voltage sweeps show that the conductance with a pinched hysteresis gradually increased with increasing applied voltage, and ...

Diamond-like carbon (DLC) films have been successfully deposited on Ti-50.8 at.%Ni using plasma based ion implantation (PBII) technique. The influences of the pulsed negative bias voltage applied to the substrate from 12 kV to 40 kV on the structure, nano-indentation hardness and Young’s modulus are investigated by the X-ray photoelectron spectroscopy (XPS) and nano-indentation technique. The r...

In this paper, we study amorphous silicon thin-lmtransistor (TFT) degradation under bias stress effect. To model threshold voltage shift with bias stress effect, fabricated samples are measured for I-V data with bias stress in variations of temperature. Rensselaer Polytechnic Institute (RPI) model is thus adopted to extract model parameters, such as the flat band voltage (VFB), the characteris...

Cadmium Zinc Telluride (CZT) is attracting increasing interest with its promise as a room-temperature nuclear-radiationdetector material. The distribution of the electric field in CZT detectors substantially affects their detection performance. At Brookhaven National Laboratory (BNL), we employed a synchrotron X-Ray mapping technique and a Pockels-effect measurement system to investigate this d...

In this work, a global bulk plasma model coupled bi-d irectionally with a Monte-Carlo/fluid sheathmodel was developed for electronegative Ar/O2 inductive discharges, to explore the ion energy function (IEDF) and angular distributions function (IADF) bombarding an rf-biased electrode. At low bias voltage, the IEDF of Ar shows a single energy peak that transforms into a bimodal distribution with ...

The charge-memory effect, bistability and switching between charged and neutral states of a molecular junction, as observed in recent STM experiments, is considered within a minimal polaron model. We show that in the case of strong electron-vibron interaction the rate of spontaneous quantum switching between charged and neutral states is exponentially suppressed at zero bias voltage but can be ...