نتایج جستجو برای: carrier density
تعداد نتایج: 477152 فیلتر نتایج به سال:
Tracking error estimation is of great importance in global navigation satellite system (GNSS) receivers. Any inaccurate estimation for tracking error will decrease the signal tracking ability of signal tracking loops and the accuracies of position fixing, velocity determination, and timing. Tracking error estimation can be done by traditional discriminator, or Kalman filter-based pre-filter. Th...
Further information on electronic properties, like trapped carrier density, for hydrogenated microcrystalline and polymorphous silicon thin films prepared by hot-wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques can be deduced from the experimental data of the high electric field dependence of the coefficient β in the steady-state photocarri...
5-Fluorouracil (5-FU) is an anticancer drug. In this work, we have investigated the electronic properties and topological analysis of interaction between 5-FU and carbon nanocone and BN nanocone. The structural stability of isomer complexes of 5-FU with carbon nanocone and BN nanocone have been investigated for two position of interactions. We have found that the most stable complexes are forme...
Thin, amorphous boron-carbon films were deposited at low temperature (400-600 °C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases were tested. At 600 °C using argon as carrier gas the deposition rate was close to 1 μm/h. The film had a density of 2.14 g/cm with a B/C-ratio of 3.7. When hydrogen was used as carrier gas the ...
It is shown that current saturation in semiconducting carbon nanotubes is indistinguishable from metallic nanotubes if the carrier density is above a critical value determined by the bandgap and the optical phonon energy. This feature stems from the higher number of current-carrying states in the semiconducting tubes due to the van Hove singularity at the band edge. Above this critical carrier ...
In this work, we demonstrate abrupt, reversible switching of resistance in 1T-TaS2 using dc and pulsed sources, corresponding to an insulator-metal transition between the insulating Mott and equilibrium metallic states. This transition occurs at a constant critical resistivity of 7 mohm-cm regardless of temperature or bias conditions and the transition time is significantly smaller than abrupt ...
A density operator approach to generalized semiconductor Bloch equations (SBE) for one-time observables which includes carrier±carrier scattering effects is presented. The theoretical concept is based upon the quantum generalization of the BBGKY hierarchy for the reduced density operators. The advantage of our method is its simplicity and transparence ± to a large extent, derivations and physic...
A new method for frequency synchronization based upon Zero-Intermediate Frequency (Zero-IF) receiver and characteristics of the received signal’s power spectrum for MC-DSCDMA-Uplink system is proposed in this paper. In addition to this, employing Zero Correlation Zone (ZCZ) sequences, designed specifically for quasisynchronous uplink transmissions, is proposed to exploit frequency and temporal ...
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a l...
The ultrafast relaxation and recombination dynamics of photogenerated electrons and holes in epitaxial graphene are studied using optical-pump terahertz-probe spectroscopy. The conductivity in graphene at terahertz frequencies depends on the carrier concentration as well as the carrier distribution in energy. Time-resolved studies of the conductivity can therefore be used to probe the dynamics ...
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