In this paper, reduced power consumption, low-noise CMOS amplifier using chopper technique is designed, chopper-equalized amplifier had been used as a front end of a voltage-to-frequency converter instrument which performs pretty well, and they were meeting just about every specification, but they had a problem with undesired and unpleasant little offset shifts and jumps. Trying to solve this p...

This paper proposes a low voltage (±0.55V supply voltage) low power (44.65µW) high common mode rejection ratio (CMRR) differential amplifier (d.a.) with rail to rail input common mode range (ICMR), constant transconductance (gm) and enhanced frequency performance. Its high performance is obtained using a simple negative averaging method so that it cancels out the common mode input signals at th...

A fully-active low-noise amplifier (LNA) for ultrawideband application is presented. Passive on-chip inductor of conventional LNA design is replaced by low-noise active inductor, significantly reducing the total chip area of the proposed CMOS LNA. The core LNA circuit is a cascoded common-source amplifier loaded with an active inductor. Two buffer stages are used to provide the required input a...

Design of an RF CMOS ultra-wideband amplifier using parasitic-aware synthesis and optimization

The authors present a low-power 850 nm Si optoelectronic integrated circuit (OEIC) receiver fabricated in standard 65 nm complementary metal–oxide semiconductor (CMOS) technology. They analyse power consumption of previously reported CMOS OEIC receivers and determine the authors receiver architecture for low-power operation. Their OEIC receiver consists of a CMOS-compatible avalanche photodetec...

VDD A 10 GHz CMOS distributed voltage controlled oscillator (DVCO) is designed in a 0.35pm BiCMOS process technology using only CMOS transistors. The oscillator achieves a tuning range of 12% (9.3 GHz to 10.5 GHz) and a phase noise of -1 14 dBc/Hz at 1 MHz offset from a carrier frequency of 10.2 GHz. The VCO uses two different simultaneous tuning techniques which allow for a coarse and fine I t...

There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore’s law beyond 22 nm technology node. Carbon nanotube based transistor (CNFET) has significant potential to replace CMOS in the future due to its better electrostatics and higher mobility. This paper presents a complete optimal design of an inverting amplifier in CMOS, CNFET a...

The classification of universal amplifiers presented in this paper places all operational amplifiers and current conveyors known from the literature into a common framework, together with abstract concepts such as the universal active element and the nullor. Our approach is new in that we base it on four-terminal theory, which results in a classification that is more extensive but not more comp...

This manuscript presents a fully differential difference transconductance amplifier (FDDTA) architecture based on CMOS inverters. Designed in 130-nm process it operates weak inversion when supplied with 0.25 V. In addition, the FDDTA requires no supplementary external calibration circuit, like tail current or bias voltage sources, since relies distributed layout technique that intrinsically mat...