The continuation of Moore’s law by conventional complementary metal oxide semiconductor (CMOS) scaling is becoming more and more challenging, requiring huge capital investments. On proposed scenario is the implementation of compound semiconductors as parts of advanced CMOS devices for More-than-Moore integration. The continuation of improved performance characteristics in CMOS manufacturing is ...

Results for the effects of on materials for a new laser-driven accelerator are presented. Various optical and laser materials are compared. While Si and fused c-SiO appear ideal for sub-bandgap laser wavelengths, other interesting candidates include certain fluorides and compound semiconductors.

Yang, Tian M.S.E.C.E, Purdue University, December, 2007. Capacitance-voltage studies of atomic-layer-deposited MOS structrures on Gallium Arsenide and other III-V compound semiconductors . Major Professor: Peide Ye. Si-based CMOS devices with traditional structure are approaching the fundamental physical limits. New device structures and materials must be explored to continue the trend of incre...

Surface charge transfer is presented as an effective doping technique for III−V nanostructures. We generalize that the technique is applicable to nanoscale semiconductors in the limit where carriers are quantum confined. As a proof-of-concept, potassium surface charge transfer doping is carried out for one-dimensional (1D) and two-dimensional (2D) InAs on Si/SiO2 substrates. Experiments and sim...