نتایج جستجو برای: crystal growth from melt
تعداد نتایج: 6220682 فیلتر نتایج به سال:
The GaAs wafer market is characterised by an increasing demand on high-quality substrates ready for epitaxial post-processing. Nowadays, advanced Vertical Bridgman (VB) growth variants such as the Vertical Gradient Freeze (VGF) technique, are preferentially employed to meet the strong requirements according to a low dislocation density and high homogeneity of the substrates. By combining the VG...
Extensive data on the viscosity, covering 15 orders of magnitude, and crystal growth rate, covering seven orders of magnitude, of liquid diopside (CaO.MgO.2SiO(2)) were collected in a wide range of undercoolings from 1.10T(g) to 0.99T(m) (T(g) is the glass transition temperature and T(m) the melting point). The raw growth rate data were corrected for the increased interfacial temperature produc...
A new experimental approach based on infrared thermography is proposed in this paper for studying crystal growth kinetics in undercooled melts. The crystallization of a thin sample of an undercooled melt at constant bulk temperature is induced by a small crystal seed and the growth of the solid phase is observed using infrared camera. The recorded thermal images allow determining the position o...
Crystallization and melting in poly(ethylene oxide) are followed in real-time using hotstage atomic force microscopy (AFM). Hedritic morphology is observed at various stages of development. Lamellar growth rates are estimated and found to agree with values obtained by conventional optical microscopy. The presence of a depletion zone is detected at the crystal/melt interface.
Structures of the α and β phases of resorcinol, a major commodity chemical in the pharmaceutical, agrichemical, and polymer industries, were the first polymorphic pair of molecular crystals solved by X-ray analysis. It was recently stated that "no additional phases can be found under atmospheric conditions" (Druzbicki, K. et al. J. Phys. Chem. B 2015, 119, 1681). Herein is described the growth ...
4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux ...
The crystal growth of high-temperature oxide superconductors has been hampered by the complexities of these materials and the lack of knowledge of corresponding phase diagrams. The most common crystal growth technique adopted for these materials is the so-called “Flux” method. This method, however, suffers from several drawbacks: (i) crystals are often crucible and flux contaminated; (ii) cryst...
Modeling turbulent convection in the melt is the most di cult part of the simulation of the transport processes in the growth of large-diameter silicon crystals by the Czochralski (CZ) process. We report the application of hybrid nite-element/ nitevolume methods for the integrated modeling of turbulence in the melt and heat transfer by conduction, convection and radiation throughout the CZ syst...
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