For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such a man...

The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behav...

Chemical vapor deposition (CVD) growth is regarded as the most promising method for realizing structure-specific single-walled carbon nanotube (SWNT) growth. In the past 20 years, many efforts dedicated to chirality-selective SWNT growth using various strategies have been reported. However, normal CVD growth under constant conditions could not fully optimize the chirality because the randomly f...

We present the successful synthesis of aligned C labeled single-walled carbon nanotube (SWNT) arrays from alcohol by a modified no-flow chemical vapor deposition (CVD) method which makes possible efficient growth using a small amount of carbon source. Synthesis of high-quality SWNTs by this alternate method was confirmed by Resonance Raman spectroscopy, which also showed the quality is uniform ...

Field-effect transistors fabricated on graphene grown by chemical vapor deposition (CVD) often exhibit large hysteresis accompanied by low mobility, high positive backgate voltage corresponding to the minimum conductivity point (V(min)), and high intrinsic carrier concentration (n(0)). In this report, we show that the mobility reported to date for CVD graphene devices on SiO(2) is limited by tr...

The Silicon on Dust Substrate (SDS) is a gas-to-wafer process that produces multicrystalline silicon ribbons directly from gaseous feedstock (silane), avoiding the standard industry steps of polysilicon deposition, crystal growth, and wafering. SDS technique consists three main steps: (i) micrometric-sized powder production by grinding chunks; (ii) chemical vapor deposition (CVD) over this subs...

Cardiovascular disease (CVD) is the leading cause of death among international travellers. Practitioner knowledge of the effects of CVD on international travel is imperative in order to promote a healthy travel experience. This review aimed to explore the available literature on this topic. The PubMed database was accessed to source relevant literature using combinations of relevant keywords as...

Chemically derived nanowire materials have attracted much attention because of their interesting geometries, properties, and potential applications.[1±3] Various methods have been developed for synthesizing semiconducting nanowires including laser ablation,[2,3] physical vapor deposition under high temperatures,[3±7] and solvothermal growth under high pressures and moderate temperatures.[3,8±10...

In recent years, research on epitaxial growth for photovoltaics became more important due to the increasing interest in thin-film silicon solar cells. Two significant challenges need to be resolved before this technique can become a competitive industrial alternative to the current dominating technology of bulk silicon solar cells: (i) the availability of a high-throughput and cost-effective ep...

Cardiovascular disease (CVD) is one of the leading causes of death in Western countries [1]. CVD is a disease that causes the highest mortality rate globally [2], and is induced by risk factors such as inflammation, elevated serum total cholesterol, low-density lipoproteins (LDL), low serum high-density lipoproteins (HDL), diabetes mellitus, and advancing age [2]. Inflammation remains as a lead...