نتایج جستجو برای: czochralski
تعداد نتایج: 542 فیلتر نتایج به سال:
The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...
The lifetime degradation induced by light illumination or carrier injection which is observed in Czochralski-grown silicon (Cz-Si) leads to a significant decrease of solar cell efficiency. In this paper, realistic simulations of industrial type solar cells are performed by a simple empirical expression describing bulk lifetime as a function of the doping concentration. The optimal doping concen...
To obtain bulk? large-sized orthoferrite single crystals with different rare-earth elements a new crystal growth technology is proposed including modified Czochralski method and using no metal crucibles for melt suspension. For this purpose two unusual Czochralski method modifications are used. In the first one the melt of crystall~zed material 1s obtained at heating the upper surface of pol~cq...
Abstract. This paper deals with axisymmmetry breaking instabilities in Czochralski process of crystal growth. Numerical linear stability analysis was carried out using the axisymmetric bulk flow model. Stability diagrams of critical Grashof numbers Grc and frequencies ωc dependent on aspect ratio α(=height/radius), 0.4 ≤ α ≤ 1.0 and Prandtl number Pr = 0.01 are shown. Computations were carried ...
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