A quantum dot (QD) thin film of arsenic (III) oxide-hydroxide/polypyrrole (As2S3-As2O3/Ppy) with a supernova-like shape has been developed for optoelectronic applications across wide optical range, spanning from ultraviolet (UV) to infrared (IR). The fabrication process involves the polymerization pyrrole form Ppy in presence NaAsO2 and K2S2O8. resulting QD exhibits remarkable morphology charac...

HgCdTe is a well known material for Infrared detection applications because of its special properties like high absorption coefficient, adjustable bandgap and moderate dielectric constant etc. Vertical PC detectors of HgCdTe are very easy to fabricate as compared to the other detectors with the desired uniformity and therefore, these detectors may be proved better choice if the cost and the yie...

1098-4402= The problems of spin-polarized free-electron beam interaction with electromagnetic wave at electronspin resonance conditions in a magnetic field and of superradiant spin-flip radiative emission are analyzed in the framework of a comprehensive classical model. The spontaneous emission of spin-flip radiation from electron beams is very weak. We show that the detectivity of electron spi...

Using the retrodictive approach of quantum physics, we show that the state retrodicted from the response of a measurement apparatus is a convenient tool to fully characterize its quantum properties. We translate in terms of this state some interesting aspects of the quantum behavior of a detector, such as the nonclassicality or the non-gaussian character of its measurements. We also introduce e...

Al0.38Ga0.62N/GaN heterojunction solar-blind Schottky photodetectors with low dark current, high responsivity, and fast pulse response were demonstrated. A five-step microwave compatible fabrication process was utilized to fabricate the devices. The solarblind detectors displayed extremely low dark current values: 30lm diameter devices exhibited leakage current below 3fA under reverse bias up t...

In this work we investigate the electrical properties of PbTe p − n junction. Mesa diodes were fabricated from p − n PbTe layers grown on (111) BaF2 substrates by molecular beam epitaxy. From the analysis of the current versus voltage characteristic measured at 80K, the incremental differential resistance and the series resistance were determined. The capacitance versus voltage curves were meas...

Engineering photonic devices from liquid has been emerging as a fascinating research avenue. Reconfigurably tuning liquid optical micro-devices are highly desirable but remain extremely challenging because of the fluidic nature. In this article we demonstrate an all-liquid tunable whispering gallery mode microlaser floating on a liquid surface fabricated by using inkjet print technique. We show...

Three-dimensional (3D) design and manufacturing enable flexible nanomembranes to deliver unique properties and applications in flexible electronics, photovoltaics, and photonics. We demonstrate that a quantum well (QW)-embedded nanomembrane in a rolled-up geometry facilitates a 3D QW infrared photodetector (QWIP) device with enhanced responsivity and detectivity. Circular geometry of nanomembra...

We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors ~QDIPs! based on InAs/GaAs epitaxical island quantum dots ~QDs! grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs ins...

Flexible photodetectors with excellent flexibility, high mechanical stability and good detectivity, have attracted great research interest in recent years. 1D inorganic nanostructures provide a number of opportunities and capabilities for use in flexible photodetectors as they have unique geometry, good transparency, outstanding mechanical flexibility, and excellent electronic/optoelectronic pr...