A mercury ultramicroelectrode (Hg-UME) has been prepared by electrochemical deposition of mercury on an iridium substrate. The iridium UMEs can be prepared with radii of l-20 pm using a molten salt etching solution of NaCl and NaNOs. The Ir and Hg UMEs have been characterized by cyclic voltammetry and chronoamperometry, and microscopically, and are shown to exhibit diffusional behavior in accor...

An approach has been developed to produce silver nanoparticles (AgNPs) rapidly on semiconductor wafers using electrochemical deposition. The closely packed AgNPs have a density of up to 1.4 × 1011 cm-2 with good size uniformity. AgNPs retain their shape and position on the substrate when used as nanomasks for producing ultrahigh-density vertical nanowire arrays with controllable size, making it...

The properties of fully complementary metal-oxide semiconductor (CMOS)-compatible metal-coated nanostructured silicon anodes for Li-ion microbatteries have been studied. The one-dimensional nanowires on black silicon (nb-Si) were prepared by inductively coupled plasma (ICP) etching and the metal (Au and Cu) coatings by successive magnetron sputtering technique. The Cu-coated nb-Si show the most...

The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

In the current work, the effect of surface morphology on light emission property and absorption behavior of quasi-columnar macro-porous silicon (PS) was investigated. PS structures with different morphology were synthesized using photo-electrochemical etching method by applying different etching current densities. SEM micrographs showed that empty macro-pores size and porosity of PS layers were...

Silicon nanowire (SiNW) arrays were produced by electroless method on polycrystalline Si substrate, in HF/ AgNO3 solution. Although the monocrystalline silicon wafer is commonly utilized as a perfect substrate, polycrystalline silicon as a low cost substrate was used in this work for photovoltaic applications. In order to study the influence of etching time (which affects the SiNWs length) on d...

This paper reports research on deep etching of silicon carbide (SiC) to achieve isolated trenches in the same thick SiC substrates. combines both plasma and electrochemical p-type above n-type layers. Uniform

Miniaturized Electrochemical cell platforms are developed using two different approaches, namely surface and bulk micromachining technologies. Gold is used as the working electrode layer in both cases. In bulk micromachined device, electrodes are formed in the cavity created on silicon using KOH etching process while the cavity is formed using SU -8 epoxy photoresist on top of the electrodes in...