An analytical modeling framework for quantum ballistic charge transport in the subthreshold regime, and a quantum threshold voltage model for nanoscale double-gate (DG) FinFET are presented. For subthreshold conditions, we assume that the electrostatics of the lightly doped silicon body is dominated by the inter-electrode capacitive coupling between the body electrodes. Hence, the charge is neg...

In this talk we extend the concept of the convex scattering support to the case of electrostatics in a bounded domain. Furthermore, we apply this approach to devise a new reconstruction algorithm in electric impedance tomography. The convex scattering support was developed by Stephen Kusiak and John Sylvester, cf. [3],[4], and is meant to be the smallest convex set that contains a scattering so...