نتایج جستجو برای: epitaxial growth
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Here we review the characteristics of "van der Waals epitaxy" (vdWE) as an alternative epitaxy mechanism that has been demonstrated as a viable method for circumventing the lattice matching requirements for epitaxial growth. Particular focus is given on the application of vdWE for nonplanar nanostructures. We highlight our works on the vdWE growth of nanowire arrays, tripods, and tetrapods from...
We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition HWCVD . Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and i the substrate temperature 230–350 °C and ii the hydrogen dilution ratio H2/SiH4=0–4...
Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525C to 575C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface, which conventionally is difficult to remo...
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