STATEMENT OF THE PROBLEM In the sandwich technique, the undesirable bond between the composite resin and glass-ionomer cement (GIc) is one of the most important factors which lead to the failure of restoration. Total-etch and self-etch adhesives may improve the bond strength based on their pH. PURPOSE The purpose of this study was to evaluate the shear bond strength between the nanofilled com...

The Automated Wet-etch Station (AWS) is one of the most critical stages of a modern semiconductor manufacturing system (SMS), which has to simultaneously deal with many complex constraints and limited resources. Due to its inherent complexity, real-world automated wet-etch station scheduling problems are very difficult to solve using traditional mathematical formulations. Thus, heuristic, metah...

— A wide range of CrO,/HF mixtures in diluted form and under laser illumination (A = 6328 A) have been found to be useful for defect revealing in n-type {100} GaAs. After removal of 0.2 0.4 microns from the GaAs surface, striations, dislocations, stacking faults and inclusions are revealed, so these etchants can be used to study defects in GaAs epitaxial layers. The characteristic features of t...

background and aims. er:yag laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. the aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following er:yag laser and/or phosphoric acid etching. materials and methods. the roots of ...

statement of the problem: monomer viscosity and solvent evaporation can be affected by the adhesive system temperature. higher temperature can elevate the vapor pressure in solution and penetration of adhesive in smear layer. bonding mechanism may be influenced by the adhesive temperature. purpose: this study aimed to evaluate the effect of pre-heating on shear bond strength of etch-and-rinse a...

GaAs etch characteristics like etch rate, etch profile sidewall angle, etch surface morphology and selectivity are studied as a function of Inductively Coupled Plasma (ICP) power and Cl2/BCl3 flow rate ratio in ICP at low pressure (<15mTorr) and low RF bias power (<100W) regime to achieve moderate GaAs etch rate with an-isotropic profiles and smooth surface morphology. The low pressure regime e...

PURPOSE The objective of this study was to compare the effect of air abrasion (KCP 2000), acid etching (37% phosphoric acid), and the combination of both procedures on the shear bond strength and microleakage of a light-cured pit-and-fissure sealant to the enamel of human primary molar teeth. METHODS Noncarious extracted human primary molars were randomly divided into 4 groups in preparation ...

OBJECTIVES The purpose of present study was to evaluate the internal adaptation of composite restorations using different adhesive systems. MATERIALS AND METHODS Typical class I cavities were prepared in 32 human third molars. The teeth were divided into the following four groups: 3-step etch-and-rinse, 2-step etch-and-rinse, 2-step self-etch and 1-step self-etch system were used. After the d...