Photovoltaic effects on Franz–Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped Ga As ∕ n-type GaAs epitaxial layer structures Detection of surface states in GaAs and InP by thermally stimulated exoelectron emission spectroscopy Temperature dependence of photoluminescence spectra in InAs/GaAs quant...

Nanostructured metal–semiconductor-metal photodetectors (MSM-PDs) can assist in future high-speed communication devices for achieving high responsivity characteristics. However, such suffer from low due to absorption, and the large band gap limits its detection range. Herein, we propose a GaAs-based photodetector with enhanced photoresponse by plasmonic Au-GaAs grating structure. The design of ...

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign o...

The coherent generation and detection of terahertz (THz) radiation using ultrashort laser pulses and photoconductive antennae have been intensively studied during the last decade. The best results were achieved when low-temperature MBE grown GaAs (LTG GaAs) or ion-implanted GaAs layers were used as a basis for THz emitters and detectors. The ultimate performance of these devices depends on carr...

We propose and analyze a high-current III-V transistor design using electron transport in the Γand L-valleys of (111) GaAs. Using sp3d5s∗ empirical tight-binding model for band-structure calculations and the top-of-the-barrier transport model, improved drive current is demonstrated using L-valley transport in a strained GaAs channel grown on an (111) InP substrate. At a body thickness of 2 nm t...

In this letter, we quantitatively investigated epitaxial GaAs nanowires catalyzed by thin Au films of different thicknesses on GaAs (111)B substrates in a metal-organic chemical vapor deposition reactor. Prior to nanowire growth, the de-wetting of Au thin films to form Au nanoparticles on GaAs (111)B in AsH3 ambient at different temperatures is investigated. It is found that with increasing fil...

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...

Combining density functional theory and the nonequilibrium Green's function method, we investigate the thermoelectric properties of thin GaAs nanowires (NWs). After identifying the most stable structures for GaAs NWs, either in wurtzite (wz) or zinc blende (zb) stacking, we present a systematic analysis on the thermoelectric properties of these NWs and their dependence on stacking type (wz or z...

We report the design, growth, fabrication, and characterization of GaAs-based high-speed p – i – n photodiodes operating at 1.55 mm. A low-temperature-grown GaAs ~LT-GaAs! layer was used as the absorption layer and the photoresponse was selectively enhanced at 1.55 mm using a resonant-cavity-detector structure. The bottom mirror of the resonant cavity was formed by a highly reflecting 15-pair G...

The optical properties of In0.8Ga0.2As self-assembled quantum dots (SAQDs) grown on GaAs wire structures formed by utilizing SiO2-patterned exact and 5°-off (001) GaAs substrates have been studied with micro-photoluminescence (μ-PL). Single PL peak was occurred for In0.8Ga0.2As SAQDs grown on SiO2-patterned exact (001) GaAs, whereas double PL peaks were showed for SAQDs grown on 5°-off (001) Ga...