Giant axonal neuropathy (GAN) results from autosomal recessive mutations (gan-) that affect cytoskeletal organization; specifically, intermediate filaments (IFs) are found collapsed into massive bundles in a variety of different cell types. We studied the gan- fibroblast lines WG321 and WG139 derived from different GAN patients. Although previous studies implied that the gan- IF phenotype was c...

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...

We report the development of 520–540 nm green light emitting diodes LEDs grown along the nonpolar a axis of GaN. GaInN /GaN-based quantum well structures were grown in homoepitaxy on both, a-plane bulk GaN and a-plane GaN on r-plane sapphire. LEDs on GaN show higher, virtually dislocation-free crystalline quality and three times higher light output power when compared to those on r-plane sapphi...

M-plane GaN(1 1 00) is grown by plasma assisted molecular beam epitaxy on ZnO(1 1 00) substrates. A low-temperature GaN buffer layer is found to be necessary to obtain good structural quality of the films. Well oriented (1 1 00) GaN films are obtained, with a slate like surface morphology. On the GaN(1 1 00) surfaces, reconstructions with symmetry of c(2x2) and approximate "4×5" are found under...

Taking advantage of strong 4-photon absorption of l e v light in GaN samples, we demonstrated the fmt ever 4-photon microscopy using GaN material system. Combining with 3-photon fluorescence and second and third harmonic generation microscopies, we studied a lateral overgrown GaN sample with high 3D resolution. Complete information regarding the distribution of growth quality, defect state, and...

Gallium Nitride (GaN) has potential application in optoelectronic and electronic devices, which are capable of operating at high temperature, high power and in harsh environments (Nakamura et al 1997, Morkoc et al 1994). In addition, GaN powders themselves could be used as high quality phosphors. GaN has low electron affinity value of 2.7-3.3 eV compared to carbon nanotubes (CNTs), zinc oxide (...

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1-xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed. INTRODUCTION From the late 60’s to the early 70’s Maruska a...

We study the concept of double-heterostructure quantum well (DHQW) InAlN/GaN/AlGaN high electron mobility transistor (HEMT) for higher device robustness and less degradation. Physics-based device simulation proves that the back barrier blocks the carrier injection into the device buffer. However, the energy of the injected electrons in the buffer is higher for any quantum well design in InAlN/G...

The effect of air/AlGaN and GaN/substrate polarization charges on the performances of GaN-based HEMTs have been investigated. We find that surface charges and, with a minor extend, GaN/substrate charges are responsible for the observed premature saturation of the dc output characteristics. Moreover, our work show that the polarization charges and holes trap appear as the source of the drain cur...

in present work, we have calculated the electronic properties including density of states and electron density for gan, inn and inxga1-xn  in wurtzite phase for x=0.5. the study is based on density functional theory with full potential linearized augmented plane wave method by generalized gradient approximation for calculating electronic properties. in this report we concluded that inxga1-xn ba...