The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor, is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor on applying a gate fiel...

We have fabricated silicon-on-insulator ~SOI! transistors with an ultrathin Si channel of ;5 nm, tunneling gate oxide of ;1 nm, and 100 nm gate length. In addition to good transistor characteristics, these same devices exhibit additional functionality at low temperature. The drain current ID exhibits steps near the turn-on threshold voltage as a function of the backgate VBG bias on the substrat...

Gate-drain capacitance and conductance measurements were performed on an Al0.15Ga0.85N/GaN heterostructure field-effect transistor to study the effects of trap states on frequency-dependent device characteristics. By varying the measurement frequency in addition to the bias applied to the gate, the density and time constants of the trap states have been determined as functions of gate bias. Det...

This work introduces three novel chaotic map circuits. Two of the circuit use two p -channel and one xmlns:xlink="http://www.w3.org/1999/xlink">n silicon-on-insulator (SOI) four-gate transistor (G 4 FET) while third design uses G FET. Th...

In this work we fabricate and characterize field-effect transistors based on the solution-processable semiconducting polymer poly(3-hexylthiophene) (P3HT). Applying two independent gate potentials to the electrolyte-gated organic field-effect transistor (EGOFET), by using a conventional SiO(2) layer as the back-gate dielectric and the electrolyte-gate as the top-gate, allows the measurement of ...

INTRODUCTION The gate dielectric has been the subject of constant improvement and innovation since the invention of the MOSFET transistor. The gate oxide is the major transistor component to control the transistor channel underneath with respect to leakage currents as well as saturation drive currents. The demand for higher drive currents and better performance has also pushed the gate oxide th...

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

1) Introduction Inside a MOSFET transistor, the basis of recent systems, the voltage at the gate contact controls the conductivity and thus the current from source to drain. Ideally, the channel current to gate voltage dependence is a heavy edge function (rf. Fig. 1). If the gate voltage is below the threshold voltage, the current through the channel is 0 and if it is above the threshold voltag...