نتایج جستجو برای: graphene nanoribbon fet

تعداد نتایج: 53438  

2016
Song Liu Safa Jamali Qingfeng Liu Joao Maia Jong-Beom Baek Naisheng Jiang Ming Xu Liming Dai

We developed a facile, but efficient, approach to graphene field-effect transistors (FET) functionalized with polymer brushes, in which the conductance can be reversibly switched by solvent-induced polymer conformational changes. Our experimental and stimulation results demonstrated that the solvent-induced conformational transition of the polymer brush could affect the carrier concentration by...

Journal: :Frontiers of Physics in China 2009

Journal: :Fizika tverdogo tela 2022

Using molecular dynamics simulation, we have shown that multilayer graphene nanoribbons located on the flat surface of h-BN crystal (on substrate) delaminate due to thermal activation into a parquet single-layer substrate. The delamination requires overcoming energy barrier associated with initial shift its upper layer. After barrier, proceeds spontaneously release energy. value this has been e...

2011
Antonino La Magna Ioannis Deretzis

Understanding the roles of disorder and metal/graphene interface on the electronic and transport properties of graphene-based systems is crucial for a consistent analysis of the data deriving from experimental measurements. The present work is devoted to the detailed study of graphene nanoribbon systems by means of self-consistent quantum transport calculations. The computational formalism is b...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2013
Dongwei Xu Haiwen Liu Vincent Sacksteder Juntao Song Hua Jiang Qing-feng Sun X C Xie

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...

2012
Yu Ye Lun Dai Lin Gan Hu Meng Yu Dai Xuefeng Guo Guogang Qin

Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors,...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2016
N C S Vieira J Borme G Machado F Cerqueira P P Freitas V Zucolotto N M R Peres P Alpuim

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field-effect transistors (FET) has not significantly changed, and the integration of devices at the wa...

Journal: :Nanoscale 2013
W Fu C Nef A Tarasov M Wipf R Stoop O Knopfmacher M Weiss M Calame C Schönenberger

Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-e...

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