نتایج جستجو برای: hafnium

تعداد نتایج: 1994  

Journal: :Angewandte Chemie International Edition 2007

Journal: :Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2004

2015
Elisa Sani Luca Mercatelli Jean-Louis Sans Laura Silvestroni Diletta Sciti

The present work reports on the comparative characterization of optical properties of hafnium and zirconium-based ultra-refractory ceramics at room and high temperature, in view of their possible use in novel solar receivers for thermal solar plants operating at higher temperatures. We show how porosity and surface finishing affect both the spectral reflectance and the high-temperature emittanc...

2012
I-Shun Wang Yi-Ting Lin Chi-Hsien Huang Tseng-Fu Lu Cheng-En Lue Polung Yang Dorota G Pijanswska Chia-Ming Yang Jer-Chyi Wang Jau-Song Yu Yu-Sun Chang Chien Chou Chao-Sung Lai

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH3 plasma treatment reduc...

2010
J. Brandon Keith Jacob R. Fennick Daniel R. Nelson Chad E. Junkermeier Jiao Y. Y. Lin Chen W. Li Michael M. McKerns James P. Lewis Brent Fultz

AtomSim, a collection of interfaces for computational crystallography simulations, has been developed. It uses forcefield-based dynamics through physics engines such as the General Utility Lattice Program, and can be integrated into larger computational frameworks such as the Virtual Neutron Facility for processing its dynamics into scattering functions, dynamical functions etc. It is also avai...

2007
S. Abermann G. Sjoblom J. Efavi M. Lemme J. Olsson E. Bertagnolli

The reduction of the equivalent oxide thickness (EOT) of the gate oxide has emerged as one of the most difficult tasks addressing future CMOS technology. In order to overcome gate tunneling, the introduction of so-called high-κ materials will be necessary [1]. Hafnium dioxide, HfO2 [2], zirconium dioxide, ZrO2 [3], and their silicates are assumed to be the most promising candidates to fulfil th...

Journal: :Science 2006
John W Valley Aaron J Cavosie Bin Fu William H Peck Simon A Wilde

Harrison et al. (Reports, 23 December 2005, p. 1947) proposed that plate tectonics and granites existed 4.5 billion years ago (Ga), within 70 million years of Earth's formation, based on geochemistry of >4.0 Ga detrital zircons from Australia. We highlight the large uncertainties of this claim and make the more moderate proposal that some crust formed by 4.4 Ga and oceans formed by 4.2 Ga.

2016
Nicolas Massoni Pierrick Chevreux

The structure of triclinic disodium hafnium disilicate, Na2HfSi2O7, has been determined by laboratory powder X-ray diffraction and refined by the Rietveld refinement. The structure is a framework made of alternate layers of HfO6 octa-hedra and SiO4 tetra-hedra linked by common O atoms. Sodium atoms are located in the voids of the framework, aligned into tunnels along the [010] direction. Na2HfS...

Journal: :Suan Sunandha Rajabhat University Journal of Science and Technology 2023

Hafnium oxide layer was deposited on unheated silicon wafer and glass substrates at different power by using RF magnetron sputtering technique. The structural property investigated Raman spectroscopy. Moreover, HfO2 structure in monoclinic major phase especially high found from the spectra vibrational modes. In addition, oxidations state of hafnium thin films gained synchrotron-based X-ray abso...

Journal: :Industrial laboratory. Diagnostics of materials 2019

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