We report on the development of a 940-nm diode laser bar based epitaxially stacked active regions by employing tunnel junction structure. The and device parameters were systematically optimized to achieve high output power conversion efficiency. A record quasi-continuous wave (QCW) peak 1.91 kW at 25 °C was demonstrated from 1-cm wide with 2-mm cavity length 1 kA drive current (200 ?s pulse wid...

In the Sibolga area, there is still a shortage of electricity supply, especially for street lighting, so accidents often occur, meanwhile has relatively large average solar radiation intensity 4,784 Wh/m2/day that potential PLTS installation. This research aims to determine performance monocrystalline panels with addition heatsink cooling fan in lighting. The method used an experimental. test b...

Panas yang dihasilkan pada pembakaran didalam kompor arang ada terbuang dinding kompor. Termoelektrik (TE) adalah semikonduktor dapat mengubah panas menjadi listrik menggunakan prinsip Seebeck effect, sebuah catu daya (power supply) digunakan untuk merubah output agar sesuai dengan kondisi beban kerja peralatan. Tujuan dari penelitian ini termoelektrik (wasted heat) arang/briket listrik. Selanj...

Abstract In this paper, we present a 28 GHz antenna array in package which covers the n257 and n258 frequency bands designated for 5G applications. The dipole is placed on one of two re-distribution layers fan-out eWLB (embedded Wafer Level Ball Grid Array) package. For TX RX, separate but identical arrays are each side die. paper presents novel horn-shaped heatsink not only dissipates heat, al...

This article characterizes the thermal behavior of a commercialized silicon carbide (SiC) power MOSFET module with special concerns on high-temperature operating conditions as well particular focuses SiC dies. A temperature-dependent Cauer-type model is proposed and extracted based offline finite-element simulations. Cauer able to reveal property each packaging layer, it suitable for thermal-pr...

Unlike SiC unipolar devices, the on-state resistance of diamond devices based on bulk conduction has a negative temperature coefficient (NTC) which reduces losses at high junction temperatures. Thus, in order to associate these opposed coefficients, current article focuses modeling hybrid power device composed n-type 4H-SiC MOSFET and p-type FET device. The optimal performances sizing are intro...

1 Contact author e-mail: [email protected] ABSTRACT A 3D electrothermal model is used to simulate and optimize Si/SiGe superlattice heterostructure micro-coolers. The model considers thermoelectric/thermionic cooling, heat conduction and Joule heating. It also includes non-ideal effects, such as contact resistance between metal and semiconductor, substrate/heatsink thermal resistance, the side c...