Chemical and crystallographic defects are a reality of solar grade silicon wafers and industrial production processes. Long overlooked, phosphorus as a dopant in silicon wafers is an excellent way to mitigate recombination associated with these defects. This paper details the connection between defect recombination and solar cell terminal characteristics, for one specific case of high hole life...

In this paper, we demonstrated the utilization of reduced graphene oxide (RGO) Langmuir-Blodgett (LB) films as high performance hole injection layer in organic light-emitting diode (OLED). By using LB technique, the well-ordered and thickness-controlled RGO sheets are incorporated between the organic active layer and the transparent conducting indium tin oxide (ITO), leading to an increase of r...

Electron-hole generation and recombination rates for plasmon emission and absorption in graphene are presented. The recombination times of carriers due to plasmon emission are found to be in the tens of femtoseconds to hundreds of picoseconds range. The recombination times depend sensitively on the carrier energy, carrier density, temperature, and plasmon dispersion. Carriers near the Dirac poi...

Within this chapter, the principles of numerical solar cell simulation are described, using AFORS-HET (automat for simulation of heterostructures). AFORS-HET is a one dimensional numerical computer program for modelling multi layer homoor heterojunction solar cells as well as some common solar cell characterization methods. Solar cell simulation subdivides into two parts: optical and electrical...

The large diffusion lengths recurrently measured in perovskite single crystals and films signal small bulk nonradiative recombination flux and locate the dominant carrier recombination processes at the outer interfaces. Surface recombination largely determines the photovoltaic performance, governing reductions under short-circuit current and open-circuit voltage. Quantification of recombination...

Despite residing in an energetically and structurally disordered landscape, the spin degree of freedom remains a robust quantity in organic semiconductor materials due to the weak coupling of spin and orbital states. This enforces spin-selectivity in recombination processes which plays a crucial role in optoelectronic devices, for example, in the spin-dependent recombination of weakly bound ele...

The organization of functional semiconductor nanoparticles (NPs) on surfaces, and specifically electrodes, attracts substantial research efforts. Semiconductor NP architectures on surfaces have been used to assemble photoelectrochemical cells, to tailor light-emitting diodes, to fabricate electrochromic devices, and to organize sensor systems. The photochemical excitation of semiconductor NPs t...