We have characterized the fundamental photoluminescence (PL) properties of individual, isolated indium phosphide (InP) nanowires to define their potential for optoelectronics. Polarization-sensitive measurements reveal a striking anisotropy in the PL intensity recorded parallel and perpendicular to the long axis of a nanowire. The order-of-magnitude polarization anisotropy was quantitatively ex...

Because of the strong spin-orbit interaction in indium antimonide, orbital motion and spin are no longer separated. This enables fast manipulation of qubit states by means of microwave electric fields. We report Rabi oscillation frequencies exceeding 100 MHz for spin-orbit qubits in InSb nanowires. Individual qubits can be selectively addressed due to intrinsic differences in their g factors. B...

Results of the investigation of the reactions of GaCl3, InCl3 and InI3 with LiNH2 under solvothermal conditions in benzene, which lead to metal nitrides, are reported. GaN is obtained as a cubic phase or as a mixture of cubic and hexagonal phases, depending on temperature. The effect of the addition of surfactants on the formation of GaN was explored. InN products were always contaminated with ...

REPORTS Fission-Track Ages and Track-Annealing Behavior of Some Micas: R. L. Fleischer et al. 349 Geomagneti Polarity Epochs: A . Cox, R. R. Doell, G. . Dalrymple . .. G.ib 35 High-Pressure Metallic Indium Telluride: Preparation and Crystal Structure: C. B. Sclazr, L. C. Carri.son, C. M. Schwartz .................352 Cretaceous Fossils Collected at Johnson Nunatak, Antarctica: i. C. B ehrendt a...

This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electric...

Metal-transparent-metallic-oxide (MTMO) grayscale photomasks fabricated by direct laser writing have been proposed in recent years. The fabrication mechanism is attributed to light-induced melt-oxidization. The temporal-spatial distribution of temperature fields of indium film-glass samples under a laser pulse have been calculated by the Finite-Difference Time-Domain method. The laser action ar...

Indium trichloride, benzyl alcohol, and triethylamine (without an added 'directing' multidentate ligand) generate a catalyst in situ for the room temperature polymerization of D,L-lactide affording highly heterotactic polylactide of controlled molecular weight and narrow molecular weight distribution.

An integrated heterodyne optical phase-locked loop was designed and demonstrated with an indium phosphide based photonic integrated circuit and commercial off-the-shelf electronic components. As an input reference, a stable microresonator-based optical frequency comb with a 50-dB span of 25 nm (~3 THz) around 1550 nm, having a spacing of ~26 GHz, was used. A widely-tunable on-chip sampled-grati...

An Indium Gallium Arsenide linear photodiode array in the 1.1-2.5 μm spectral range was characterized. The array has 1024X1 pixels with a 25 μm pitch and was manufactured by Sensors Unlimited, Inc. Characterization and analysis of the electrical and optical properties of a camera system were carried out at room temperature to obtain detector performance parameters. The signal and noise were mea...

Indium halides or bismuth halides catalyzed the coupling of various alcohols with alkenylsilanes to give the corresponding alkenes stereospecifically without any other activators.