نتایج جستجو برای: ion beam sputtering

تعداد نتایج: 313044  

2004
John D. Williams Mark L. Johnson Desiree D. Williams

A differential sputter yield measurement technique is described, which consists of a quartz crystal monitor that is swept at constant radial distance from a small target region where a high current density xenon ion beam is aimed. This apparatus has been used to characterize the sputtering behavior of various forms of carbon including polycrystalline graphite, pyrolytic graphite, and PVD-infilt...

2012
P. C. Smith D. N. Ruzic

Related Articles Probe current distribution characterization technique for focused ion beam J. Vac. Sci. Technol. B 30, 06F606 (2012) From sponge to dot arrays on (100) Ge by increasing the energy of ion impacts J. Vac. Sci. Technol. B 30, 06FF12 (2012) New method of calculating adsorption and scattering for Xe-Pt(111) using Direct Simulation Monte Carlo techniques J. Vac. Sci. Technol. A 30, 0...

Journal: : 2022

The results of a research on the surface morphology nanostructured nickel after high-fluence irradiation with 30 keV argon ions have been presented. nanostructure in was formed by high-pressure torsion deformation. It has shown that deformation nanostructuring and subsequent ion-beam sputtering allows receiving uniformly coated submicron cones. thermal stability obtained cone-shaped structure d...

Journal: :The Review of scientific instruments 2012
J Lettry J Alessi D Faircloth A Gerardin T Kalvas H Pereira S Sgobba

Linac4 accelerator of Centre Européen de Recherches Nucléaires is under construction and a RF-driven H(-) ion source is being developed. The beam current requirement for Linac4 is very challenging: 80 mA must be provided. Cesiated plasma discharge ion sources such as Penning or magnetron sources are also potential candidates. Accelerator ion sources must achieve typical reliability figures of 9...

2006
WALDEMAR OLESZKIEWICZ PIOTR ROMISZOWSKI

In this study we present Monte Carlo simulation studies of thin films deposited in the ion beam assisted deposition (IBAD) process. The simulations were performed on a simple cubic lattice with the Metropolis sampling algorithm. Examination of the microstructure and morphology of the simulated film shows that the processes of the surface diffusion of adatoms and the sputtering of the film durin...

Journal: :Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2015

2011
Sven Macko Frank Frost Martin Engler Dietmar Hirsch Thomas Höche Jörg Grenzer Thomas Michely

Pattern formation on Si(001) through 2 keV Kr ion beam erosion of Si(001) at an incident angle of θ = 30 and in the presence of sputter codeposition or co-evaporation of Fe is investigated by using in situ scanning tunneling microscopy, ex situ atomic force microscopy and electron microscopy. The phenomenology of pattern formation is presented, and experiments are conducted to rule out or deter...

2009
Graeme Horne

The research presented in this summary was carried out by the author as part of his fourth-year group industrial project [1], in pursuit of the degree Master of Engineering in Mechanical Engineering at the University of Bristol. The project, Measurement of residual stress in heterogeneous materials, was conducted with three other students and consisted of experimental work at the microand macro...

Fatemeh Hajakbari

In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and  silicon  substrates  using  single  ion  beam  sputtering  technique.  The  physical  and  chemical properties  of  prepared  films  were  investigated  by  different  characterization  technique.  X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...

2004
Francisco Hernández Jorge Rodríguez Albert Romano Rodríguez Anna Vilà Juan Ramón Morante

Since the last years, Focused Ion Beam (FIB) has been growing in popularity as a microand nanofabrication tool, especially because it has shown exceptional capabilities and very high precision in both milling and depositing materials at the nanometer scale. Being a sputtering (physical) process, milling by FIB can be realized over a wide variety of materials. On the contrary, deposition involve...

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