نتایج جستجو برای: ion sensitive field effect transistor

تعداد نتایج: 2722734  

Journal: :journal of advances in computer research 0
meysam mohammadi department of computer engineering, ayatollah amoli branch, islamic azad university, amol, iran yavar safaei mehrabani independent researcher

full adder cell is often placed in the critical path of other circuits. therefore it plays an important role in determining the entire performance of digital system. moreover, portable electronic systems rely on battery and low-power design is another concern. in conclusion it is a vital task to design high-performance and low-power full adder cells. since delay opposes against power consumptio...

Journal: :Biosensors 2021

The use of deoxyribonucleic acid (DNA) hybridization to detect disease-related gene expression is a valuable diagnostic tool. An ion-sensitive field-effect transistor (ISFET) with graphene layer has been utilized for detecting DNA hybridization. Silicene two-dimensional silicon allotrope structural properties similar graphene. Thus, it recently experienced intensive scientific research interest...

Journal: :Lab on a chip 2006
Pagra Truman Petra Uhlmann Manfred Stamm

A novel single silicon thin film field-effect-transistor (FET) is developed for use as a sensor to monitor transport and chemical properties of liquids in microfluidic systems. The sensor elements which are compatible with existing (bio-)chemical sensor schemes based on ion-sensitive-field-effect-transistors (ISFET) can detect capillary filling speed and level in aqueous solutions. Using a tran...

2005
Feng Yan Pedro Estrela Yang Mo Piero Migliorato Hiroshi Maeda

The Ion Sensitive Field Effect Transistor (ISFET) operation based on polycrystalline silicon thin film transistors is reported. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with PE-CVD Si3N4 deposit...

E. Asl-Soleimani F. Raissi N. Manavizadeh,

The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency perform...

Journal: :Electrochemical science advances 2022

Over the past decades, considerable development and improvement can be observed in area of ion-sensitive field-effect transistor (ISFET) for biosensing applications. The mature semiconductor industry provides a solid foundation commercialization ISFET-based sensors extensive research has been conducted to improve performance ISFET, with special focus on materials, device structures, readout top...

2017
Kokab B. Parizi Xiaoqing Xu Ashish Pal Xiaolin Hu H. S. Philip Wong

The Field Effect sensors are broadly used for detecting various target analytes in chemical and biological solutions. We report the conditions under which the pH sensitivity of an Ion Sensitive Field Effect transistor (ISFET) sensor can be significantly enhanced. Our theory and simulations show that by using pH buffer solutions containing counter-ions that are beyond a specific size, the sensor...

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