The paper reported the fabrication and operation of nonvolatile ferroelectric field effect transistors (FeFETs) with a top gate and top contact structure. Ultrathin Si nanomembranes without source and drain doping were used as the semiconducting layers whose electrical performance was modulated by the polarization of the ferroelectric poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] th...

In this paper, we propose a novel design analysis for a Junctionless Double Gate Vertical MOSFET (JLVMOS) with metal gate electrode and HfO2, for which the simulations have been performed using TCAD (ATLAS), The simulated results exhibits significant improvements in comparison to conventional JLVMOS device with a polysilicon gate electrode and ITRS values for different node technology . In plac...

Multielectrode sensor arrays and bi-sensor systems designed for short and/or real-time concentration measurements of sodium, potassium, chloride, bicarbonate and pH are presented. The systems used for routine measurements in a small volume of blood and in biological liquids bathing a living human bronchial epithelial cell monolayer to characterize ion-fluxes are in focus [1, 2]. Several applica...

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evok...

This paper presents a new design for 14 transistor single bit full adder, implemented using five transistor XNOR/XOR cell and transmission gate multiplexer. For transmission gate multiplexer complementary gate control signals are required and in 14 transistor full Adder both XOR and XNOR signals are generated. XNOR/XOR cell shows high power consumption than single XNOR gate. So, 8 transistor fu...