Articles you may be interested in Phase field simulation of kinetic superheating and melting of aluminum nanolayer irradiated by pico-and femtosecond laser Appl. Highly localized heat generation by femtosecond laser induced plasmon excitation in Ag nanowires Appl. Origin of temperature plateaus in laser-heated diamond anvil cell experiments Ultrafast melting and resolidification of gold particl...

We report on the fabrication of fractal dendrites using laser-induced melting aluminum alloys. target boron carbide (B4C), which is one most effective radiation-absorbing materials characterized by a low coefficient thermal expansion. Due to high fragility B4C crystals, we were able introduce its nanoparticles into stabilization matrix AA385.0. The high-intensity laser field action led formatio...

Current post-process heat treatments applied to selective laser melting produced Ti-6Al-4V do not achieve the same microstructure and therefore superior tensile behaviour of thermomechanical processed wrought Ti-6Al-4V. Due to the growing demand for selective laser melting produced parts in industry, research and development towards improved mechanical properties is ongoing. This study is aimed...

In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the ...

introduction: the purpose of a desensitizing agent is a permanent coating or filling of dentin surface. morphological analysis in vitro of this treated surface is essential to understand the interaction between desensitizing agent and hypersensitive dentin. the aim was to evaluate the morphology of four dentin surface treated with desensitizing agents. methods: this was an in vitro laboratory s...

The rapid melting of silicon film due to the absorption of a CW laser beam radiation is studied. The silicon film melting and recrystallization is mainly controlled by the temperature distribution in the semiconductor. The enthalpy technique for the solution of phase change problems is used in an explicit finite difference form to calculate the transient temperature distribution in the silicon ...