Before the CMOS process is scaled into deep sub-micron process, dynamic energy loss has always dominated power dissipation, while leakage power is little. The aggressive scaling of device dimensions and threshold voltage has significantly increased leakage current exponentially, thus the MOS devices will no longer be totally turned-off anymore. The power dissipation caused by leakage current ca...

As the technology scales down to 90 nm and below, static random access memory (SRAM) standby leakage power is becoming one of the most critical concerns for low power applications. In this article, we review three major leakage current components of SRAM cells and also discuss some of the leakage current reduction techniques including body biasing, source biasing, dynamic VDD, negative word lin...

Leakage power consumption plays a significant role in current CMOS technology. International Technology Roadmap for semiconductors reports that leakage power consumption dominates the total chip power consumption as technology advances to nano scale. Most of the battery operated applications such as cell phones, Laptops etc requires a longer battery life, which can be made possible by controlli...

In this paper, we propose a leakage reduction technique. Because high leakage currents in deep submicron regimes are becoming a major contributor to total power dissipation of CMOS circuits. Sub threshold leakage current plays a very important role in power dissipation. So to reduce the sub threshold leakage current we proposed an adaptive voltage level (AVL) technique. Which optimize the overa...

The characteristics of dislocation-related leakage current paths in an AlGaN/GaN heterostructure grown by molecular-beam epitaxy and their mitigation by local surface modification have been investigated using conductive atomic force microscopy. When a voltage is applied between the tip in an atomic force microscope ~AFM! and the sample, a thin insulating layer is formed in the vicinity of the l...