The ref lec tance m e a s u r e m e n t dur ing the select ive depos i t ion of W on Si covered wi th an insula tor grat ing is p roven to be a conven i en t m e t h o d to mon i to r the W deposi t ion. The ref lectance change dur ing depos i t ion al lows the in s i tu measu r e m e n t of the depos i t ion rate: The inf luence of surface roughen ing due to e i ther the W growth or an e tch i...

Two major research areas pertinent to microelectromechanical systems (MEMS) materials and material surfaces were explored and developed in this 5-year PECASE LDRD project carried out by Professor Roya Maboudian and her collaborators at the University of California at Berkeley. In the first research area, polycrystalline silicon carbide (poly-SiC) was developed as a structural material for MEMS....

We present a comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process. In order to meet industrial simulation requirements, e.g. accuracy and fast delivery of results, we present an overview of established and new models, their use within TCAD applications, and their best results which have been obtained by calibrations according to ...

The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au.

Silicon nitride is a material compatible with CMOS processes and offers several advantages, such as wide transparent window, large forbidden band gap, negligible two-photon absorption, excellent nonlinear properties, smaller thermo-optic coefficient than silicon. Therefore, it has received significant attention in the field of silicon photonics recent years. The preparation waveguides using low...

The fabrication processes of silicon nitride photonic devices used in foundries require low temperature deposition, which typically leads to high propagation losses. Here, we show that loss as 0.42 dB/cm can be achieved using foundry compatible by solely reducing waveguide surface roughness. By post-processing the fabricated rapid thermal anneal (RTA) and furnace anneal, achieve losses down 0.2...