An inductive linear displacement measurement microsystem realized as a monolithic Application-Specific Integrated Circuit (ASIC) is presented. The system comprises integrated microtransformers as sensing elements, and analog front-end electronics for signal processing and demodulation, both jointly fabricated in a conventional commercially available four-metal 350-nm CMOS process. The key novel...

Most reported spatially combined or quasioptical amplifier arrays exhibit resonant narrowband performance (<10%) and have not addressed thermal management issues. We report a waveguide-based spatial combining scheme using broadband tapered-slot transitions, capable of realizing full waveguide band coverage (40% fractional bandwidth) with good thermal properties. An X-band prototype using eight ...

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories’ 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...

A four-device broadband solid-state power amplifier, which is based on radial waveguide power-dividing/combining circuit, has been investigated in this work. The fabricated power amplifier combining four monolithic microwave integrated circuit power amplifiers shows a 12–16.6 dB small-signal gain over a broadband from 6 to 14 GHz. The measured maximum output power at 1 dB compression is 25.6 dB...

A fully matched Ka-band wideband pseudomorphic highelectron-mobility transistor (PHEMT) 1-W monolithic millimeter-wave integrated circuit (MMIC) high-power amplifier (HPA) without any external circuit is developed. The two-stage HPAs are prepared on 2-mil GaAs substrates with a small chip size of 3.46 2.9 mm. At least 10-dB small-signal gain, 29.5 dBm P 1dB, 31-dBm Psat, and better than 12-dB o...

This paper focuses on InP-based, HEMT Monolithic Millimeter-wave Integrated Circuit (MMIC) power amplifiers for applications to heterodyne receivers, transmitters, and communications circuits. Recently, we have developed several HEMT MMIC circuits using HRL Laboratories' 0.1 um InP HEMT technology with unprecedented high frequency performance and output power. Our results include an 80 GHz band...

In this paper a monolithically integrated frequency tripler based on an antiparallel pair of Schottky diodes is presented. The tripler is designed for flat output power response and wide frequency range. With 2 mW of input power the tripler covers the frequency range of 75 – 140 GHz (bandwidth 60 %) delivering output power between -19.4 dBm and -14.7 dBm with an average efficiency of 1.1 %. The...

After the release of the unlicensed Ultra Wideband (UWB) spectrum 3.1 GHz to 10.6 GHz for the commercial purposes by the Federal Communications Commission (FCC), industries and academia pay much attention due to its properties of excellent immunity to multi-path interference, high secured data rate, low power consumption, and simple configuration. The feasible UWB antenna design face some chall...

Mitsubishi Electric Corporation has developed a millimeter-wave radar for automotive application. Monolithic microwave integrated circuits (MMICs), developed specifically for this application by Mitsubishi Electric, are used for the radio-frequency (RF) module to obtain outstanding radar performance. This millimeter-wave radar incorporates a signal-processing unit in the radar head, resulting i...

New RF circuit techniques have overcome the distortion problems for low supply voltages. The RF IC chip-set for the 1.9 GHz Japanese Personal Handy Phone (PHP) system includes a low noise amplifier (GaAs MMIC), a mixer (GaAs MMIC), a linear power amplifier (GaAs MMIC), a T/R switch (GaAs MMIC), a 1.9 GHz direct-conversion quadrature modulator (Si LSI), and a frequency synthesizer (Si LSI). Thes...